Parametric results for: epc2012c under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ULTRA LOW RESISTANCE 1

2 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

200 V 2

2 hits Apply

Drain Current-Max (ID) (1)

5 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

100 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-XXUC-X4 2

2 hits Apply

Manufacturer (1)

Efficient Power Conversion 2

2 hits Apply

1 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

UNCASED CHIP 2

2 hits Apply

Contact Manufacturer 2

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply