Parametric results for: emh10 under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 21 2 BUILT IN BIAS RESISTOR RATIO 21 1 BUILT IN BIAS RESISTOR RATIO 21.36 2 BUILT-IN BIAS RESISTOR RATIO IS 21 2 BUILT-IN BIAS RESISTOR RATIO IS 21.36 1

15 hits Apply

Collector Current-Max (IC) (1)

100 mA 10

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Collector-Emitter Voltage-Max (1)

50 V 8

15 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 8

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DC Current Gain-Min (hFE) (3)

70.0 1 80.0 3 100.0 5

Min - Max

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R-PDSO-F6 8

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e2 1 e3 7

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Manufacturer (8)

Galaxy Microelectronics 1 Infineon Technologies AG 1 Jiangsu Changjiang Electronics Technology Co Ltd 1 Micro Commercial Components 3 Nexperia 3 NXP Semiconductors 2 Philips Semiconductors 1 ROHM Semiconductor 3

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1 8

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Number of Elements (1)

2 10

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Number of Terminals (1)

6 8

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150.0 °C 6

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PLASTIC/EPOXY 8

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RECTANGULAR 8

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SMALL OUTLINE 8

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Active 9 Contact Manufacturer 1 Obsolete 2 Transferred 3

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Yes 2

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260 9 NOT SPECIFIED 1

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Polarity/Channel Type (1)

NPN 11

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150 mW 3 250 mW 1 300 mW 3

Min (W) - Max (W)

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Surface Mount (1)

YES 10

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Transition Frequency-Nom (fT) (2)

170 MHz 1 250 MHz 3

Min (MHz) - Max (MHz)

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