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Parametric » Memory » SRAMs

Parametric results for: edi8m8257c120 under SRAMs

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Manufacturer Part Number: edi8m8257c120
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EDI8M8257C120N6I
 Electronic Designs Inc 		Check for Price Obsolete 2.0972 Mbit 8 256KX8 5 V 120 ns SRAM MODULE 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE YES PARALLEL 5.5 V 4.5 V CMOS INDUSTRIAL R-XDMA-T32 Not Qualified 85 °C -40 °C 32 UNSPECIFIED DIP RECTANGULAR MICROELECTRONIC ASSEMBLY NO THROUGH-HOLE DUAL ELECTRONIC DESIGNS INC unknown
EDI8M8257C120P6C
 Electronic Designs Inc 		Check for Price No Obsolete 2.0972 Mbit 8 256KX8 5 V 120 ns SRAM MODULE COMMON 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE YES PARALLEL 5 mA 4.5 V 90 µA 5.5 V 4.5 V CMOS COMMERCIAL R-XDMA-T32 Not Qualified e0 70 °C 32 UNSPECIFIED DIP DIP32,.6 RECTANGULAR MICROELECTRONIC ASSEMBLY NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL ELECTRONIC DESIGNS INC unknown
EDI8M8257C120CB
 Electronic Designs Inc 		Check for Price No Obsolete 2.0972 Mbit 8 256KX8 5 V 120 ns SRAM MODULE COMMON 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 120 µA CMOS MILITARY R-XDIP-T32 Not Qualified e0 125 °C -55 °C MIL-STD-883 Class B (Modified) 32 CERAMIC DIP DIP32,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL ELECTRONIC DESIGNS INC unknown 3A001.A.2.C 8542.32.00.41
EDI8M8257C120CC
 Electronic Designs Inc 		Check for Price No Obsolete 2.0972 Mbit 8 256KX8 5 V 120 ns SRAM MODULE COMMON 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 120 µA CMOS COMMERCIAL R-XDIP-T32 Not Qualified e0 70 °C 32 CERAMIC DIP DIP32,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL ELECTRONIC DESIGNS INC unknown 3A991.B.2.A 8542.32.00.41
EDI8M8257C120P6B
 Electronic Designs Inc 		Check for Price Obsolete 2.0972 Mbit 8 256KX8 5 V 120 ns SRAM MODULE 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE YES PARALLEL 5.5 V 4.5 V CMOS MILITARY R-XDMA-T32 Not Qualified 125 °C -55 °C MIL-STD-883 32 UNSPECIFIED DIP RECTANGULAR MICROELECTRONIC ASSEMBLY NO THROUGH-HOLE DUAL ELECTRONIC DESIGNS INC unknown 3A001.A.2.C 8542.32.00.41
EDI8M8257C120P6M
 Electronic Designs Inc 		Check for Price Obsolete 2.0972 Mbit 8 256KX8 5 V 120 ns SRAM MODULE 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE YES PARALLEL 5.5 V 4.5 V CMOS MILITARY R-XDMA-T32 Not Qualified 125 °C -55 °C MIL-STD-883 32 UNSPECIFIED DIP RECTANGULAR MICROELECTRONIC ASSEMBLY NO THROUGH-HOLE DUAL ELECTRONIC DESIGNS INC unknown 3A001.A.2.C 8542.32.00.41
EDI8M8257C120C6B
 Electronic Designs Inc 		Check for Price No Obsolete 2.0972 Mbit 8 256KX8 5 V 120 ns SRAM MODULE COMMON 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE YES PARALLEL 10 mA 4.5 V 110 µA 5.5 V 4.5 V CMOS MILITARY R-XDMA-T32 Not Qualified e0 125 °C -55 °C MIL-STD-883 Class B (Modified) 32 UNSPECIFIED DIP DIP32,.6 RECTANGULAR MICROELECTRONIC ASSEMBLY NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL ELECTRONIC DESIGNS INC unknown 3A001.A.2.C 8542.32.00.41
EDI8M8257C120C6C
 White Electronic Designs Corp 		Check for Price No Obsolete 2.0972 Mbit 8 256KX8 5 V 120 ns SRAM MODULE COMMON 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 5 mA 4.5 V 90 µA CMOS COMMERCIAL R-XDIP-T32 Not Qualified e0 70 °C 32 CERAMIC DIP DIP32,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL WHITE ELECTRONIC DESIGNS CORP unknown 3A991.B.2.A 8542.32.00.41
EDI8M8257C120N6C
 Electronic Designs Inc 		Check for Price Obsolete 2.0972 Mbit 8 256KX8 5 V 120 ns SRAM MODULE 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE YES PARALLEL 5.5 V 4.5 V CMOS COMMERCIAL R-XDMA-T32 Not Qualified 70 °C 32 UNSPECIFIED DIP RECTANGULAR MICROELECTRONIC ASSEMBLY NO THROUGH-HOLE DUAL ELECTRONIC DESIGNS INC unknown
EDI8M8257C120P6I
 Electronic Designs Inc 		Check for Price Obsolete 2.0972 Mbit 8 256KX8 5 V 120 ns SRAM MODULE 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE YES PARALLEL 5.5 V 4.5 V CMOS INDUSTRIAL R-XDMA-T32 Not Qualified 85 °C -40 °C 32 UNSPECIFIED DIP RECTANGULAR MICROELECTRONIC ASSEMBLY NO THROUGH-HOLE DUAL ELECTRONIC DESIGNS INC unknown
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