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DS1250WP-IND
Maxim Integrated Products
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Check for Price | No | No | Transferred | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEARS OF DATA RETENTION PERIOD | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | CMOS | INDUSTRIAL | R-XDMA-N34 | Not Qualified | e0 | 85 °C | -40 °C | 34 | UNSPECIFIED | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | NO LEAD | DUAL | MAXIM INTEGRATED PRODUCTS INC | , | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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DS1250WP-100IND+
Maxim Integrated Products
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Check for Price | Yes | Yes | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 100 ns | NON-VOLATILE SRAM MODULE | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 250 µA | 50 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-XDMA-U34 | Not Qualified | e3 | 85 °C | -40 °C | 34 | UNSPECIFIED | MODULE,34LEAD,1.0 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | YES | MATTE TIN | J INVERTED | DUAL | MAXIM INTEGRATED PRODUCTS INC | ROHS COMPLIANT, POWERCAP MODULE-34 | compliant | 3A991.B.2.A | 8473.30.11.40 | DMA | 34 | |||||
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DS1250WP-150-IND
Dallas Semiconductor
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Check for Price | Transferred | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEARS MINIMUM DATA RETENTION | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 150 µA | 85 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-XDMA-U34 | Not Qualified | 85 °C | -40 °C | 34 | UNSPECIFIED | MODULE,34LEAD,1.0 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | YES | J INVERTED | DUAL | DALLAS SEMICONDUCTOR | POWERCAP MODULE-34 | unknown | ||||||||||||
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DS1250W-150
Maxim Integrated Products
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 150 ns | NON-VOLATILE SRAM MODULE | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 150 µA | 85 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-XDMA-P32 | Not Qualified | e0 | 70 °C | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | PIN/PEG | 2.54 mm | DUAL | MAXIM INTEGRATED PRODUCTS INC | 0.740 INCH, DIP-32 | not_compliant | 3A991.B.2.A | 8473.30.11.40 | ||||||
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DS1250WP-IND
Dallas Semiconductor
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Check for Price | Transferred | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEARS OF DATA RETENTION PERIOD | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | CMOS | INDUSTRIAL | R-XDMA-N34 | Not Qualified | 85 °C | -40 °C | 34 | UNSPECIFIED | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | DALLAS SEMICONDUCTOR | unknown | ||||||||||||||||||
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DS1250W-100-IND
Dallas Semiconductor
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Check for Price | No | Transferred | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 100 ns | NON-VOLATILE SRAM | 512000 | 524.288 k | 150 µA | 50 µA | CMOS | INDUSTRIAL | R-PDIP-T32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | DALLAS SEMICONDUCTOR | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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DS1250W-100
Maxim Integrated Products
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Check for Price | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 100 ns | NON-VOLATILE SRAM MODULE | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 150 µA | 50 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-XDMA-P32 | Not Qualified | e0 | 70 °C | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | PIN/PEG | 2.54 mm | DUAL | MAXIM INTEGRATED PRODUCTS INC | 0.740 INCH, DIP-32 | compliant | |||||||||
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DS1250WP
Maxim Integrated Products
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Check for Price | No | No | Transferred | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEARS OF DATA RETENTION PERIOD | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | CMOS | COMMERCIAL | R-XDMA-N34 | Not Qualified | e0 | 70 °C | 34 | UNSPECIFIED | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | NO LEAD | DUAL | MAXIM INTEGRATED PRODUCTS INC | , | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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DS1250W-100+
Maxim Integrated Products
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Check for Price | Yes | Yes | Transferred | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 100 ns | NON-VOLATILE SRAM MODULE | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 250 µA | 50 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-XDMA-P32 | Not Qualified | e3 | 70 °C | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | MATTE TIN | PIN/PEG | 2.54 mm | DUAL | MAXIM INTEGRATED PRODUCTS INC | DIP, DIP32,.6 | not_compliant | 3A991.B.2.A | 8473.30.11.40 | MODULE | 32 | ||||
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DS1250W-100IND
Maxim Integrated Products
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Check for Price | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 100 ns | NON-VOLATILE SRAM MODULE | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 150 µA | 50 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-XDMA-P32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | PIN/PEG | 2.54 mm | DUAL | MAXIM INTEGRATED PRODUCTS INC | DIP, DIP32,.6 | not_compliant | 3A991.B.2.A | 8473.30.11.40 | MODULE | 32 |