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DS1250AB-70+
Maxim Integrated Products
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$70.4270 | Yes | Yes | Transferred | 4.1943 Mbit | 8 | 512KX8 | 5 V | 70 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 600 µA | 85 µA | 5.25 V | 4.75 V | CMOS | COMMERCIAL | R-XDMA-P32 | Not Qualified | e3 | 70 °C | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | MATTE TIN | PIN/PEG | 2.54 mm | DUAL | MAXIM INTEGRATED PRODUCTS INC | MODULE | 0.740 INCH, ROHS COMPLIANT, DIP-32 | 32 | compliant | 3A991.B.2.A | 8473.30.11.40 | ||||||||||||
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DS1250AB-70
Maxim Integrated Products
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 5 V | 70 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5 mA | 85 µA | 5.25 V | 4.75 V | CMOS | COMMERCIAL | R-XDMA-P32 | Not Qualified | e0 | 70 °C | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | PIN/PEG | 2.54 mm | DUAL | MAXIM INTEGRATED PRODUCTS INC | DIP | 0.740 INCH, DIP-32 | 32 | not_compliant | 3A991.B.2.A | 8473.30.11.40 | ||||||||||||
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DS1250AB-70
Rochester Electronics LLC
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Check for Price | No | No | Active | 4.1943 Mbit | 8 | 512KX8 | 5 V | 70 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5.25 V | 4.75 V | CMOS | COMMERCIAL | R-XDMA-P32 | COMMERCIAL | e0 | NOT SPECIFIED | 70 °C | 240 | NOT SPECIFIED | 32 | UNSPECIFIED | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | PIN/PEG | DUAL | ROCHESTER ELECTRONICS LLC | MODULE | 0.740 INCH, DIP-32 | 32 | unknown | ||||||||||||||||
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DS1250AB-70IND+
Analog Devices Inc
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Check for Price | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 5 V | 70 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 600 µA | 85 µA | 5.25 V | 4.75 V | CMOS | INDUSTRIAL | R-XDMA-P32 | Not Qualified | e3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | Matte Tin (Sn) | PIN/PEG | 2.54 mm | DUAL | ANALOG DEVICES INC | N/A | 0.740 INCH, ROHS COMPLIANT, DIP-32 | 32 | compliant | N/A | 2002-10-30 | Analog Devices | |||||||||
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DS1250AB-70+
Analog Devices Inc
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Check for Price | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 5 V | 70 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 600 µA | 85 µA | 5.25 V | 4.75 V | CMOS | COMMERCIAL | R-XDMA-P32 | Not Qualified | e3 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | Matte Tin (Sn) | PIN/PEG | 2.54 mm | DUAL | ANALOG DEVICES INC | N/A | 0.740 INCH, ROHS COMPLIANT, DIP-32 | 32 | compliant | N/A | 2002-10-30 | Analog Devices | ||||||||||
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DS1250AB-70-IND
Dallas Semiconductor
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Check for Price | No | Transferred | 4.1943 Mbit | 8 | 512KX8 | 5 V | 70 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION PERIOD | 1 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5 mA | 85 µA | 5.25 V | 4.75 V | CMOS | INDUSTRIAL | R-XDIP-T32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | DALLAS SEMICONDUCTOR | 0.740 INCH, EXTENDED MODULE, DIP-32 | unknown | |||||||||||||
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DS1250AB-70
Dallas Semiconductor
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Check for Price | No | Transferred | 4.1943 Mbit | 8 | 512KX8 | 5 V | 70 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION PERIOD | 1 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5 mA | 85 µA | 5.25 V | 4.75 V | CMOS | COMMERCIAL | R-XDIP-T32 | Not Qualified | e0 | 70 °C | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | DALLAS SEMICONDUCTOR | 0.740 INCH, EXTENDED MODULE, DIP-32 | unknown | ||||||||||||||
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DS1250AB-70IND
Maxim Integrated Products
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 5 V | 70 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5 mA | 85 µA | 5.25 V | 4.75 V | CMOS | INDUSTRIAL | R-XDMA-P32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | PIN/PEG | 2.54 mm | DUAL | MAXIM INTEGRATED PRODUCTS INC | MODULE | 0.740 INCH, DIP-32 | 32 | not_compliant | 3A991.B.2.A | 8473.30.11.40 | |||||||||||
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DS1250AB-70IND+
Maxim Integrated Products
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Check for Price | Yes | Yes | Transferred | 4.1943 Mbit | 8 | 512KX8 | 5 V | 70 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 600 µA | 85 µA | 5.25 V | 4.75 V | CMOS | INDUSTRIAL | R-XDMA-P32 | Not Qualified | e3 | 85 °C | -40 °C | 32 | UNSPECIFIED | DIP | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | MATTE TIN | PIN/PEG | 2.54 mm | DUAL | MAXIM INTEGRATED PRODUCTS INC | MODULE | 0.740 INCH, ROHS COMPLIANT, DIP-32 | 32 | compliant | 3A991.B.2.A | 8473.30.11.40 |