Parametric results for: di-08 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3

4 hits Apply

150.0 mJ 1 185.4 mJ 2

Min (mJ) - Max (mJ)

4 hits Apply

DRAIN 3

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (2)

30 V 1 65 V 2

Min (V) - Max (V)

4 hits Apply

Drain Current-Max (ID) (2)

80 A 1 105 A 2

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (2)

1.8 mΩ 1 3 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

34 pF 2 730 pF 1

Min (pF) - Max (pF)

4 hits Apply

R-PDSO-F8 3

4 hits Apply

e2 3 e3 1

4 hits Apply

Manufacturer (1)

Diotec Semiconductor AG 4

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

8 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 3

4 hits Apply

-55.0 °C 3

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Active 4

4 hits Apply

260 2 NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

35 W 1 65.8 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply