Parametric results for: d%201691-%20y under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount

LOW NOISE 4

4 hits Apply

SOURCE 4

4 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 4

4 hits Apply

DS Breakdown Voltage-Min (1)

65 V 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 4

4 hits Apply

R-CDFM-F4 4

4 hits Apply

e4 4

4 hits Apply

Manufacturer (2)

TT Electronics Power and Hybrid / Semelab Limited 2 TT Electronics Resistors 2

4 hits Apply

Number of Elements (1)

2 4

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

200.0 °C 4

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Obsolete 4

4 hits Apply

No 1 Yes 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply