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CAV24C02YE-GT3
onsemi
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$0.3198 | Yes | Active | 2.048 kbit | 1 | 2KX1 | 3.6 V | 400 kHz | EEPROM | 100 YEAR DATA RETENTION | 100 | 1000000 Write/Erase Cycles | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | SERIAL | I2C | 5 µA | 2 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 125 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | ONSEMI | TSSOP8, 4.4x3 | TSSOP-8 | 8 | 948AL | compliant | EAR99 | 8542.32.00.51 | onsemi | ||||||||||
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CAV24C16WE-GT3
onsemi
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$0.3539 | Yes | Active | 16.384 kbit | 1 | 16KX1 | 3.6 V | 400 kHz | EEPROM | 100 YEAR DATA RETENTION | 100 | 1000000 Write/Erase Cycles | 1 | 1 | 16000 | 16.384 k | SYNCHRONOUS | SERIAL | I2C | 5 µA | 2 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 125 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | ONSEMI | SOIC 8, 150 mils | WLCSP-5 | 8 | 751BD | compliant | EAR99 | 8542.32.00.51 | onsemi | ||||||||||
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CAV24C02WE-GT3
onsemi
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$0.3628 | Yes | Active | 2.048 kbit | 1 | 2KX1 | 3.6 V | 400 kHz | EEPROM | 100 YEAR DATA RETENTION | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | 3-STATE | SERIAL | 3.6 V | I2C | 5 µA | 2 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 125 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | ONSEMI | SOIC 8, 150 mils | SOIC-8 | 8 | 751BD | compliant | EAR99 | 8542.32.00.51 | onsemi | |||||||
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CAV24C04YE-GT3
onsemi
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$0.4343 | Yes | Active | 4.096 kbit | 1 | 4KX1 | 3.6 V | 400 kHz | EEPROM | 100 YEAR DATA RETENTION | 100 | 1000000 Write/Erase Cycles | 1 | 1 | 4000 | 4.096 k | SYNCHRONOUS | SERIAL | I2C | 5 µA | 2 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 125 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | ONSEMI | TSSOP8, 4.4x3 | TSSOP-8 | 8 | 948AL | compliant | EAR99 | 8542.32.00.51 | onsemi | ||||||||||
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CAV24C32WE-GT3
onsemi
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$0.4641 | Yes | Active | 32.768 kbit | 8 | 4KX8 | 3.3 V | 400 kHz | EEPROM | 1 | 4000 | 4.096 k | SYNCHRONOUS | SERIAL | I2C | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | R-PDSO-G8 | e4 | 1 | 125 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | ONSEMI | SOIC 8, 150 mils | SOIC-8 | 8 | 751BD | compliant | EAR99 | 8542.32.00.51 | onsemi | |||||||||||||||||||
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CAV24C64WE-GT3
onsemi
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$0.4895 | Yes | Active | 65.536 kbit | 1 | 64KX1 | 5 V | 3.5 ps | 400 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | 5 V | NO | I2C | 5 µA | 2 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | R-PDSO-G8 | e4 | 1 | 125 °C | -40 °C | 260 | AEC-Q100 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | ONSEMI | SOIC 8, 150 mils | SOIC-8 | 8 | 751BD | compliant | EAR99 | 8542.32.00.51 | onsemi | ||||||||
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CAV24C256WE-GT3
onsemi
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$0.7463 | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3.3 V | 1 MHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 32000 | 32.768 k | SYNCHRONOUS | SERIAL | SPI | 5 µA | 3 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 125 °C | -40 °C | 260 | AEC-Q100 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | ONSEMI | SOIC 8, 150 mils | SOIC-8 | 8 | 751BD | compliant | EAR99 | 8542.32.00.51 | onsemi | ||||||||||
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CAV24C08YE-GT3
onsemi
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$0.8142 | Yes | Active | 8.192 kbit | 1 | 8KX1 | 3.6 V | 400 kHz | EEPROM | 100 YEAR DATA RETENTION | 100 | 1000000 Write/Erase Cycles | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | I2C | 5 µA | 2 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 125 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | ONSEMI | TSSOP8, 4.4x3 | TSSOP-8 | 8 | 948AL | compliant | EAR99 | 8542.32.00.51 | onsemi | ||||||||||
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CAV24C64XE-T2
onsemi
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Check for Price | Yes | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 3.5 ps | 400 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | 5 V | NO | I2C | 5 µA | 2 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | S-PDSO-G8 | e3 | 125 °C | -40 °C | AEC-Q100 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.03 mm | 5.3 mm | 5.3 mm | ON SEMICONDUCTOR | SOIC-8 | compliant | EAR99 | 8542.32.00.51 | 2018-04-24 | ||||||||||||||
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CAV24C32C5ATR
onsemi
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Check for Price | Yes | Active | 32.768 kbit | 8 | 4KX8 | 3.3 V | 400 kHz | EEPROM | 1 | 4000 | 4.096 k | SYNCHRONOUS | SERIAL | I2C | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | R-PBGA-B5 | e1 | 125 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 5 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 400 µm | BOTTOM | 350 µm | 1.34 mm | 910 µm | ON SEMICONDUCTOR | VFBGA, | 567GN | compliant | EAR99 | 8542.32.00.51 | onsemi | 2016-02-22 |