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CAT28LV64GI-15
Catalyst Semiconductor
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$2.6236 | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 3.3 V | 150 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 32 words | PARALLEL | 3 V | 100 µA | 8 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, LDCC32,.5X.6 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||
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CAT28LV64GI-15
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3.3 V | 150 ns | EEPROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 3 V | CMOS | INDUSTRIAL | 5 ms | R-PQCC-J32 | COMMERCIAL | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ROCHESTER ELECTRONICS LLC | QFJ | LEAD AND HALOGEN FREE, PLASTIC, LCC-32 | 32 | unknown | |||||||||||||
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CAT28LV64GI-15T
onsemi
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3.3 V | 150 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 32 words | PARALLEL | 3 V | 100 µA | 8 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | LCC | QCCJ, LDCC32,.5X.6 | 32 | compliant | EAR99 | 8542.32.00.51 | ||||||
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CAT28LV64GI15
onsemi
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3.3 V | 150 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 32 words | PARALLEL | 3 V | 100 µA | 8 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Tin (Sn) | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | QFJ | QCCJ, LDCC32,.5X.6 | 32 | compliant | EAR99 | 8542.32.00.51 | |||||||
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CAT28LV64GI-15T
Catalyst Semiconductor
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Check for Price | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 3.3 V | 150 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 32 words | PARALLEL | 3 V | 100 µA | 8 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, LDCC32,.5X.6 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||
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CAT28LV64GI-15
onsemi
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Check for Price | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3.3 V | 3.3 V | 150 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 32 words | PARALLEL | 3 V | 100 µA | 8 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | QFJ | QCCJ, LDCC32,.5X.6 | 32 | compliant |