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CAT28C256GI-12T
onsemi
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Check for Price | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 64 words | PARALLEL | 5 V | 150 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.965 mm | 11.425 mm | ON SEMICONDUCTOR | QFJ | HALOGEN AND LEAD FREE, PLASTIC, LCC-32 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||
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CAT28C256GI-12
Catalyst Semiconductor
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Check for Price | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 64 words | PARALLEL | 5 V | 150 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e3 | 2 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.965 mm | 11.425 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, LDCC32,.5X.6 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||
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CAT28C256GI-12
onsemi
|
Check for Price | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 5 V | 120 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 64 words | PARALLEL | 5 V | 150 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.965 mm | 11.425 mm | ON SEMICONDUCTOR | QFJ | QCCJ, LDCC32,.5X.6 | 32 | compliant | onsemi | ||||
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CAT28C256GI-12T
Catalyst Semiconductor
|
Check for Price | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 64 words | PARALLEL | 5 V | 150 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.965 mm | 11.425 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, LDCC32,.5X.6 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||
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CAT28C256GI12
onsemi
|
Check for Price | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 64 words | PARALLEL | 5 V | 150 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 5 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.965 mm | 11.425 mm | ONSEMI | QFJ | LEAD AND HALOGEN FREE, PLASTIC, LCC-32 | 32 | compliant | EAR99 | 8542.32.00.51 |