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CAT24WC65LI-1.8REVB
Catalyst Semiconductor
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3 V | 100 kHz | EEPROM | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | I2C | 3 µA | 6 V | 1.8 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, | 8 | unknown | EAR99 | 8542.32.00.51 | |||||||||||
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CAT24WC65L-1.8REVD
Catalyst Semiconductor
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3 V | 100 kHz | EEPROM | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | I2C | 3 µA | 5.5 V | 1.8 V | CMOS | COMMERCIAL | 10 ms | R-PDIP-T8 | Not Qualified | 70 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 8 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.59 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, | 8 | unknown | EAR99 | 8542.32.00.51 | |||||||||||
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CAT24WC65LA-REVB
Catalyst Semiconductor
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3 V | 100 kHz | EEPROM | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | I2C | 3 µA | 6 V | 2.5 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e3 | 105 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, | 8 | unknown | EAR99 | 8542.32.00.51 | |||||||||||
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CAT24WC65L
Catalyst Semiconductor
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3 V | 100 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | I2C | 1 µA | 3 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 10 ms | HARDWARE | R-PDIP-T8 | Not Qualified | e3 | 70 °C | AEC-Q100 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.35 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 | |||||
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CAT24WC65LA
Catalyst Semiconductor
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3 V | 100 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | I2C | 10 µA | 3 µA | 6 V | 2.5 V | CMOS | INDUSTRIAL | 10 ms | HARDWARE | R-PDIP-T8 | Not Qualified | e3 | 105 °C | -40 °C | AEC-Q100 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.35 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 | ||||
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CAT24WC65LA-1.8
Catalyst Semiconductor
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3 V | 100 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | I2C | 10 µA | 3 µA | 6 V | 1.8 V | CMOS | INDUSTRIAL | 10 ms | HARDWARE | R-PDIP-T8 | Not Qualified | e3 | 105 °C | -40 °C | AEC-Q100 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.35 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 | ||||
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CAT24WC65LA-1.8REVD
Catalyst Semiconductor
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3 V | 100 kHz | EEPROM | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | I2C | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | 105 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 8 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.59 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, | 8 | unknown | EAR99 | 8542.32.00.51 | ||||||||||
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CAT24WC65LI-1.8
Catalyst Semiconductor
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3 V | 100 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | I2C | 10 µA | 3 µA | 6 V | 1.8 V | CMOS | INDUSTRIAL | 10 ms | HARDWARE | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | AEC-Q100 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.35 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 | ||||
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CAT24WC65LE-REVD
Catalyst Semiconductor
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3 V | 100 kHz | EEPROM | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | I2C | 3 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 10 ms | R-PDIP-T8 | Not Qualified | 125 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 8 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.59 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, | 8 | unknown | EAR99 | 8542.32.00.51 | ||||||||||
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CAT24WC65L-1.8
Catalyst Semiconductor
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Check for Price | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 3 V | 100 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 8000 | 8.192 k | SYNCHRONOUS | SERIAL | I2C | 1 µA | 3 µA | 6 V | 1.8 V | CMOS | COMMERCIAL | 10 ms | HARDWARE | R-PDIP-T8 | Not Qualified | e3 | 70 °C | AEC-Q100 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.35 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 |