Parametric results for: cat24wc65lte13 under EEPROMs

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Manufacturer Part Number: cat24wc65l
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CAT24WC65LI-1.8REVB
Catalyst Semiconductor
Check for Price Yes Obsolete 65.536 kbit 8 8KX8 3 V 100 kHz EEPROM 1 8000 8.192 k SYNCHRONOUS SERIAL I2C 3 µA 6 V 1.8 V CMOS INDUSTRIAL 10 ms R-PDIP-T8 Not Qualified e3 85 °C -40 °C 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.36 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, 8 unknown EAR99 8542.32.00.51
CAT24WC65L-1.8REVD
Catalyst Semiconductor
Check for Price Yes Obsolete 65.536 kbit 8 8KX8 3 V 100 kHz EEPROM 1 8000 8.192 k SYNCHRONOUS SERIAL I2C 3 µA 5.5 V 1.8 V CMOS COMMERCIAL 10 ms R-PDIP-T8 Not Qualified 70 °C NOT SPECIFIED AEC-Q100 NOT SPECIFIED 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.59 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, 8 unknown EAR99 8542.32.00.51
CAT24WC65LA-REVB
Catalyst Semiconductor
Check for Price Yes Obsolete 65.536 kbit 8 8KX8 3 V 100 kHz EEPROM 1 8000 8.192 k SYNCHRONOUS SERIAL I2C 3 µA 6 V 2.5 V CMOS INDUSTRIAL 10 ms R-PDIP-T8 Not Qualified e3 105 °C -40 °C 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.36 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, 8 unknown EAR99 8542.32.00.51
CAT24WC65L
Catalyst Semiconductor
Check for Price Yes Obsolete 65.536 kbit 8 8KX8 3 V 100 kHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 8000 8.192 k SYNCHRONOUS SERIAL I2C 1 µA 3 µA 6 V 2.5 V CMOS COMMERCIAL 10 ms HARDWARE R-PDIP-T8 Not Qualified e3 70 °C AEC-Q100 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.35 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, DIP8,.3 8 unknown EAR99 8542.32.00.51
CAT24WC65LA
Catalyst Semiconductor
Check for Price Yes Obsolete 65.536 kbit 8 8KX8 3 V 100 kHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 8000 8.192 k SYNCHRONOUS SERIAL I2C 10 µA 3 µA 6 V 2.5 V CMOS INDUSTRIAL 10 ms HARDWARE R-PDIP-T8 Not Qualified e3 105 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.35 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, DIP8,.3 8 unknown EAR99 8542.32.00.51
CAT24WC65LA-1.8
Catalyst Semiconductor
Check for Price Yes Obsolete 65.536 kbit 8 8KX8 3 V 100 kHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 8000 8.192 k SYNCHRONOUS SERIAL I2C 10 µA 3 µA 6 V 1.8 V CMOS INDUSTRIAL 10 ms HARDWARE R-PDIP-T8 Not Qualified e3 105 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.35 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, DIP8,.3 8 unknown EAR99 8542.32.00.51
CAT24WC65LA-1.8REVD
Catalyst Semiconductor
Check for Price Yes Obsolete 65.536 kbit 8 8KX8 3 V 100 kHz EEPROM 1 8000 8.192 k SYNCHRONOUS SERIAL I2C 3 µA 5.5 V 1.8 V CMOS INDUSTRIAL 10 ms R-PDIP-T8 Not Qualified 105 °C -40 °C NOT SPECIFIED AEC-Q100 NOT SPECIFIED 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.59 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, 8 unknown EAR99 8542.32.00.51
CAT24WC65LI-1.8
Catalyst Semiconductor
Check for Price Yes Obsolete 65.536 kbit 8 8KX8 3 V 100 kHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 8000 8.192 k SYNCHRONOUS SERIAL I2C 10 µA 3 µA 6 V 1.8 V CMOS INDUSTRIAL 10 ms HARDWARE R-PDIP-T8 Not Qualified e3 85 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.35 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, DIP8,.3 8 unknown EAR99 8542.32.00.51
CAT24WC65LE-REVD
Catalyst Semiconductor
Check for Price Yes Obsolete 65.536 kbit 8 8KX8 3 V 100 kHz EEPROM 1 8000 8.192 k SYNCHRONOUS SERIAL I2C 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 10 ms R-PDIP-T8 Not Qualified 125 °C -40 °C NOT SPECIFIED AEC-Q100 NOT SPECIFIED 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.59 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, 8 unknown EAR99 8542.32.00.51
CAT24WC65L-1.8
Catalyst Semiconductor
Check for Price Yes Obsolete 65.536 kbit 8 8KX8 3 V 100 kHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 8000 8.192 k SYNCHRONOUS SERIAL I2C 1 µA 3 µA 6 V 1.8 V CMOS COMMERCIAL 10 ms HARDWARE R-PDIP-T8 Not Qualified e3 70 °C AEC-Q100 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.35 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, DIP8,.3 8 unknown EAR99 8542.32.00.51