Parametric results for: cat24wc02lete13f under EEPROMs

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Manufacturer Part Number: cat24wc02le
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CAT24WC02LE-REV-E
Catalyst Semiconductor
Check for Price Yes Obsolete 2.048 kbit 8 256X8 3 V 100 kHz EEPROM 1 256 256 words SYNCHRONOUS SERIAL I2C 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 10 ms R-PDIP-T8 Not Qualified e3 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.59 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, 8 unknown EAR99 8542.32.00.51
CAT24WC02LE-REV-F
Catalyst Semiconductor
Check for Price Yes Obsolete 2.048 kbit 8 256X8 3 V 100 kHz EEPROM 1 256 256 words SYNCHRONOUS SERIAL I2C 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 10 ms R-PDIP-T8 Not Qualified e3 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.59 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, 8 unknown EAR99 8542.32.00.51
CAT24WC02LE
Catalyst Semiconductor
Check for Price Yes Obsolete 2.048 kbit 8 256X8 3 V 100 kHz EEPROM 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION 100 1000000 Write/Erase Cycles 1010DDDR 1 256 256 words SYNCHRONOUS SERIAL I2C 10 µA 3 µA 6 V 2.5 V CMOS AUTOMOTIVE 10 ms HARDWARE R-PDIP-T8 Not Qualified e3 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.36 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, DIP8,.3 8 unknown EAR99 8542.32.00.51
CAT24WC02LE-1.8
Catalyst Semiconductor
Check for Price Yes Obsolete 2.048 kbit 8 256X8 3 V 100 kHz EEPROM 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION 100 1000000 Write/Erase Cycles 1010DDDR 1 256 256 words SYNCHRONOUS SERIAL I2C 10 µA 3 µA 6 V 1.8 V CMOS AUTOMOTIVE 10 ms HARDWARE R-PDIP-T8 Not Qualified e3 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.36 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, DIP8,.3 8 unknown EAR99 8542.32.00.51
CAT24WC02LE-1.8REV-F
Catalyst Semiconductor
Check for Price Yes Obsolete 2.048 kbit 8 256X8 3 V 100 kHz EEPROM 1 256 256 words SYNCHRONOUS SERIAL I2C 3 µA 5.5 V 1.8 V CMOS AUTOMOTIVE 10 ms R-PDIP-T8 Not Qualified e3 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.59 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, 8 unknown EAR99 8542.32.00.51
CAT24WC02LEREV-E
onsemi
Check for Price Yes Obsolete 2.048 kbit 8 256X8 5 V 400 kHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 256 256 words SYNCHRONOUS SERIAL I2C 1 µA 3 µA 5.5 V 4.5 V CMOS AUTOMOTIVE 10 ms HARDWARE R-PDIP-T8 Not Qualified 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL ON SEMICONDUCTOR DIP, DIP8,.3 compliant EAR99 8542.32.00.51
CAT24WC02LE-1.8REV-C
onsemi
Check for Price Yes Obsolete 2.048 kbit 8 256X8 3 V 100 kHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 256 256 words SYNCHRONOUS SERIAL I2C 1 µA 3 µA 5.5 V 1.8 V CMOS AUTOMOTIVE 10 ms HARDWARE R-PDIP-T8 Not Qualified 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL ON SEMICONDUCTOR DIP, DIP8,.3 compliant EAR99 8542.32.00.51
CAT24WC02LE-1.8
onsemi
Check for Price Yes Obsolete 2.048 kbit 8 256X8 3 V 100 kHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 256 256 words SYNCHRONOUS SERIAL I2C 1 µA 3 µA 5.5 V 1.8 V CMOS AUTOMOTIVE 10 ms HARDWARE R-PDIP-T8 Not Qualified 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL ON SEMICONDUCTOR DIP, DIP8,.3 unknown EAR99 8542.32.00.51
CAT24WC02LE-1.8REV-E
Catalyst Semiconductor
Check for Price Yes Obsolete 2.048 kbit 8 256X8 3 V 100 kHz EEPROM 1 256 256 words SYNCHRONOUS SERIAL I2C 3 µA 5.5 V 1.8 V CMOS AUTOMOTIVE 10 ms R-PDIP-T8 Not Qualified e3 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.57 mm 9.59 mm 7.62 mm CATALYST SEMICONDUCTOR INC DIP DIP, 8 unknown EAR99 8542.32.00.51
CAT24WC02LEREV-C
onsemi
Check for Price Yes Obsolete 2.048 kbit 8 256X8 5 V 400 kHz EEPROM 100 1000000 Write/Erase Cycles 1010DDDR 1 256 256 words SYNCHRONOUS SERIAL I2C 1 µA 3 µA 5.5 V 4.5 V CMOS AUTOMOTIVE 10 ms HARDWARE R-PDIP-T8 Not Qualified 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL ON SEMICONDUCTOR DIP, DIP8,.3 compliant EAR99 8542.32.00.51