Parametric results for: byv28-100 under Rectifier Diodes

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Manufacturer Part Number: byv28100
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SBYV28-100-E3/73
Vishay Intertechnologies
$0.2457 Yes Active 3.5 A 1.1 V 20 ns SILICON RECTIFIER DIODE SINGLE NO 100 V 1 LOW LEAKAGE CURRENT, FREE WHEELING DIODE EFFICIENCY 90 A 1 Not Qualified O-PALF-W2 e3 DO-201AD 150 °C -55 °C ISOLATED 2 PLASTIC/EPOXY ROUND LONG FORM MATTE TIN WIRE AXIAL VISHAY INTERTECHNOLOGY INC ROHS COMPLIANT, PLASTIC PACKAGE-2 compliant Vishay
SBYV28-100-E3/73
Vishay Semiconductors
$0.3049 Yes Yes Active 3.5 A 1.1 V 20 ns SILICON RECTIFIER DIODE SINGLE NO 100 V 1 LOW LEAKAGE CURRENT, FREE WHEELING DIODE EFFICIENCY 90 A 1 Not Qualified O-PALF-W2 e3 DO-201AD 150 °C -55 °C ISOLATED 2 PLASTIC/EPOXY ROUND LONG FORM MATTE TIN WIRE AXIAL VISHAY SEMICONDUCTORS O-PALF-W2 unknown Vishay DO-201AD 2 EAR99 8541.10.00.80
SBYV28-100-E3/54
Vishay Semiconductors
$0.3180 Yes Yes Active 3.5 A 1.1 V 20 ns SILICON RECTIFIER DIODE SINGLE NO 100 V 1 LOW LEAKAGE CURRENT, FREE WHEELING DIODE EFFICIENCY 90 A 1 Not Qualified O-PALF-W2 e3 DO-201AD 150 °C -55 °C ISOLATED 2 PLASTIC/EPOXY ROUND LONG FORM MATTE TIN WIRE AXIAL VISHAY SEMICONDUCTORS O-PALF-W2 unknown Vishay DO-201AD 2 EAR99 8541.10.00.80
BYV28-100-TAP
Vishay Intertechnologies
$0.6878 Yes Active 3.5 A 890 mV 30 ns SILICON RECTIFIER DIODE SINGLE NO 100 V 1 AVALANCHE METALLURGICALLY BONDED ULTRA FAST RECOVERY 90 A 1 Not Qualified E-LALF-W2 e2 175 °C -55 °C 260 30 ISOLATED 2 GLASS ELLIPTICAL LONG FORM TIN SILVER WIRE AXIAL VISHAY INTERTECHNOLOGY INC HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 compliant Vishay
BYV28-100-TAP
Vishay Semiconductors
$0.6894 Yes Yes Active 3.5 A 890 mV 30 ns SILICON RECTIFIER DIODE SINGLE NO 100 V 1 AVALANCHE METALLURGICALLY BONDED ULTRA FAST RECOVERY 90 A 1 Not Qualified E-LALF-W2 e2 175 °C -55 °C 260 30 ISOLATED 2 GLASS ELLIPTICAL LONG FORM TIN SILVER WIRE AXIAL VISHAY SEMICONDUCTORS E-LALF-W2 unknown Vishay 2 EAR99 8541.10.00.80
BYV28-100/33112
NXP Semiconductors
Check for Price Obsolete 3.5 A 1.02 V 25 ns 5 µA SILICON RECTIFIER DIODE SINGLE NO 100 V 1 AVALANCHE ULTRA FAST RECOVERY 90 A 1 Not Qualified O-LALF-W2 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL NXP SEMICONDUCTORS O-LALF-W2 unknown EAR99 8541.10.00.80
BYV28-100/33133
NXP Semiconductors
Check for Price Obsolete 3.5 A 1.02 V 25 ns 5 µA SILICON RECTIFIER DIODE SINGLE NO 100 V 1 AVALANCHE ULTRA FAST RECOVERY 90 A 1 Not Qualified O-LALF-W2 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL NXP SEMICONDUCTORS O-LALF-W2 unknown EAR99 8541.10.00.80
BYV28-100/50133
NXP Semiconductors
Check for Price Obsolete 3.5 A 1.02 V 25 ns 5 µA SILICON RECTIFIER DIODE SINGLE NO 100 V 1 AVALANCHE ULTRA FAST RECOVERY 90 A 1 Not Qualified O-LALF-W2 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL NXP SEMICONDUCTORS O-LALF-W2 unknown EAR99 8541.10.00.80
BYV28-100
EIC Semiconductor Inc
Check for Price Yes Yes Active 3.5 A 1.1 V 35 ns 5 µA SILICON RECTIFIER DIODE SINGLE NO 100 V 1 AVALANCHE HIGH RELIABILITY FAST RECOVERY 90 A 1 O-PALF-W2 175 °C -65 °C ISOLATED 2 PLASTIC/EPOXY ROUND LONG FORM WIRE AXIAL EIC SEMICONDUCTOR CO LTD compliant EAR99 8541.10.00.80
BYV28-100-TR
Vishay Intertechnologies
Check for Price Yes Active 3.5 A 890 mV 30 ns SILICON RECTIFIER DIODE SINGLE NO 100 V 1 AVALANCHE METALLURGICALLY BONDED ULTRA FAST RECOVERY 90 A 1 Not Qualified E-LALF-W2 e2 1 175 °C -55 °C 260 30 ISOLATED 2 GLASS ELLIPTICAL LONG FORM Tin/Silver (Sn/Ag) WIRE AXIAL VISHAY INTERTECHNOLOGY INC HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 compliant Vishay