Parametric results for: buk552 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 12

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30.0 mJ 12

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DRAIN 12

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Configuration (2)

SINGLE 11 SINGLE WITH BUILT-IN DIODE 12

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DS Breakdown Voltage-Min (3)

60 V 6 100 V 6 200 V 1

Min (V) - Max (V)

23 hits Apply

Drain Current-Max (ID) (4)

8.5 A 5 10 A 5 13 A 6 14 A 7

Min (A) - Max (A)

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Drain-source On Resistance-Max (4)

150 mΩ 3 180 mΩ 3 280 mΩ 3 350 mΩ 3

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 23

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50 pF 2 100 pF 2

Min (pF) - Max (pF)

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TO-220AB 12

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R-PSFM-T3 12

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e0 10

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Manufacturer (4)

New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 6 NXP Semiconductors 12 Philips Semiconductors 4

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Number of Elements (1)

1 23

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Number of Terminals (1)

3 12

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ENHANCEMENT MODE 23

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150.0 °C 2 175.0 °C 20

Min (°C) - Max (°C)

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PLASTIC/EPOXY 12

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RECTANGULAR 12

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FLANGE MOUNT 12

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Contact Manufacturer 1 Obsolete 12 Transferred 10

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Polarity/Channel Type (1)

N-CHANNEL 23

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60 W 4

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60 W 14

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Surface Mount (1)

NO 22

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