Parametric results for: bts130e3045 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

DRAIN 4

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR 4

5 hits Apply

DS Breakdown Voltage-Min (1)

50 V 4

5 hits Apply

Drain Current-Max (ID) (1)

27 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

50 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

270 pF 1

5 hits Apply

R-PSSO-G2 4

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 3 Siemens 2

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

2 4

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 2

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

75 W 1

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply