Parametric results for: bss84akv under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 3

5 hits Apply

Configuration (2)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2 SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

50 V 3

5 hits Apply

Drain Current-Max (ID) (2)

170 mA 3 180 mA 1

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (1)

8.5 Ω 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

TO-236AB 1

5 hits Apply

R-PDSO-F6 2 R-PDSO-G3 1

5 hits Apply

e3 5

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Manufacturer (2)

Nexperia 3 NXP Semiconductors 2

5 hits Apply

1 5

5 hits Apply

Number of Elements (2)

1 1 2 2

Min - Max

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Number of Terminals (2)

3 1 6 2

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

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SMALL OUTLINE 3

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Active 3 Transferred 2

5 hits Apply

260 4 NOT SPECIFIED 1

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Polarity/Channel Type (1)

P-CHANNEL 4

5 hits Apply

500 mW 1

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply