Parametric results for: bss31 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 6 LOGIC LEVEL COMPATIBLE 2

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Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 11

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DS Breakdown Voltage-Min (1)

30 V 11

16 hits Apply

Drain Current-Max (ID) (2)

1.4 A 3 1.5 A 9

Min (A) - Max (A)

16 hits Apply

Drain-source On Resistance-Max (3)

140 mΩ 2 150 mΩ 6 160 mΩ 3

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 12

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7 pF 3 11 pF 2 84 pF 6

Min (pF) - Max (pF)

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R-PDSO-G3 11

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e3 11

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Manufacturer (1)

Infineon Technologies AG 16

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1 8

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Number of Elements (1)

1 12

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Number of Terminals (1)

3 11

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ENHANCEMENT MODE 11

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150.0 °C 7

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PLASTIC/EPOXY 11

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RECTANGULAR 11

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SMALL OUTLINE 11

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Active 10 Obsolete 6

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Yes 4

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260 6 NOT SPECIFIED 4

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Polarity/Channel Type (2)

N-CHANNEL 3 P-CHANNEL 9

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500 mW 6

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Surface Mount (1)

YES 12

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