Filter Your Search
1 - 10 of 36 results
Select Parts | Part Number |
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BSP300E6327
Siemens
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BSP308
Infineon Technologies AG
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BSP30
STMicroelectronics
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BSP30-TAPE-13
NXP Semiconductors
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BSP300
Siemens
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BSP30
NXP Semiconductors
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BSP304AAMO
NXP Semiconductors
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BSP300E6327
Infineon Technologies AG
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BSP304T/R
NXP Semiconductors
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BSP30T/R
NXP Semiconductors
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Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Collector-Emitter Voltage-Max
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Collector Current-Max (IC)
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Polarity/Channel Type |
Surface Mount
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Configuration |
Number of Terminals
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DS Breakdown Voltage-Min
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Number of Elements |
DC Current Gain-Min (hFE)
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Drain Current-Max (ID)
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Drain-source On Resistance-Max
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Transition Frequency-Nom (fT)
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Additional Feature
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Avalanche Energy Rating (Eas)
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Collector-Base Capacitance-Max
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Feedback Cap-Max (Crss)
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FET Technology |
Operating Mode
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Power Dissipation-Max (Abs)
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Pulsed Drain Current-Max (IDM)
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Transistor Application
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Transistor Element Material
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Turn-off Time-Max (toff)
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Turn-on Time-Max (ton)
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VCEsat-Max
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JEDEC-95 Code
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JESD-30 Code
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JESD-609 Code
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Qualification Status
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Moisture Sensitivity Level
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Operating Temperature-Max
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Peak Reflow Temperature (Cel)
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Case Connection
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Package Body Material
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Package Shape
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Package Style
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Terminal Finish
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Terminal Form
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Terminal Position
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Ihs Manufacturer
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Reach Compliance Code
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ECCN Code
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Part Package Code
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Package Description
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Pin Count
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Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 800 V | 1 | 190 mA | 20 Ω | 36 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 760 mA | SILICON | R-PSSO-G3 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | SIEMENS A G | unknown | EAR99 | ||||||||||||||||||||||||
No | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 4.7 A | 50 mΩ | LOGIC LEVEL COMPATIBLE | 55 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.8 W | 18.8 A | SWITCHING | SILICON | R-PDSO-G4 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | SOT-223 | SOT-223, 4 PIN | 4 | |||||||||||||
Yes | Yes | Obsolete | 60 V | 1 A | PNP | YES | SINGLE | 4 | 1 | 40 | 100 MHz | 2 W | SILICON | R-PDSO-G4 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | STMICROELECTRONICS | compliant | EAR99 | SOT-223 | SMALL OUTLINE, R-PDSO-G4 | 4 | |||||||||||||||||||
Obsolete | 60 V | 1 A | PNP | YES | SINGLE | 4 | 1 | 30 | 100 MHz | 20 pF | SILICON | 650 ns | 500 ns | 500 mV | R-PDSO-G4 | Not Qualified | 150 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NXP SEMICONDUCTORS | unknown | EAR99 | SMALL OUTLINE, R-PDSO-G4 | |||||||||||||||||||||
Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 800 V | 1 | 190 mA | 20 Ω | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 760 mA | SILICON | 64 ns | 35 ns | R-PDSO-G4 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | SIEMENS A G | unknown | EAR99 | |||||||||||||||||||||
Obsolete | 60 V | 1 A | PNP | YES | SINGLE | 4 | 1 | 30 | 100 MHz | 20 pF | SILICON | 650 ns | 500 ns | 500 mV | R-PDSO-G4 | Not Qualified | 150 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NXP SEMICONDUCTORS | unknown | EAR99 | SMALL OUTLINE, R-PDSO-G4 | |||||||||||||||||||||
Yes | Obsolete | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 300 V | 1 | 170 mA | 17 Ω | LOGIC LEVEL COMPATIBLE | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN | THROUGH-HOLE | BOTTOM | NXP SEMICONDUCTORS | unknown | EAR99 | TO-92 | CYLINDRICAL, O-PBCY-T3 | 3 | |||||||||||||||||
No | Obsolete | N-CHANNEL | YES | SINGLE | 4 | 800 V | 1 | 190 mA | 20 Ω | AVALANCHE RATED | 36 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.8 W | 760 mA | SILICON | R-PDSO-G4 | Not Qualified | 1 | 150 °C | 255 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | unknown | EAR99 | PLASTIC PACKAGE-4 | 4 | ||||||||||||||||
Obsolete | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 300 V | 1 | 170 mA | 17 Ω | LOGIC LEVEL COMPATIBLE | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | NXP SEMICONDUCTORS | compliant | EAR99 | |||||||||||||||||||||
Obsolete | 60 V | 1 A | PNP | YES | SINGLE | 4 | 1 | 30 | 100 MHz | 20 pF | 2 W | SILICON | 650 ns | 500 ns | 500 mV | R-PDSO-G4 | Not Qualified | 150 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NXP SEMICONDUCTORS | compliant | EAR99 | SMALL OUTLINE, R-PDSO-G4 |
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BSP300E6327
Siemens
|
Check for Price | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 800 V | 1 | 190 mA | 20 Ω | 36 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 760 mA | SILICON | R-PSSO-G3 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | SIEMENS A G | unknown | EAR99 | |||||||||||||||||||||||||
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BSP308
Infineon Technologies AG
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Check for Price | No | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 4.7 A | 50 mΩ | LOGIC LEVEL COMPATIBLE | 55 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.8 W | 18.8 A | SWITCHING | SILICON | R-PDSO-G4 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | SOT-223 | SOT-223, 4 PIN | 4 | ||||||||||||||
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BSP30
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | 60 V | 1 A | PNP | YES | SINGLE | 4 | 1 | 40 | 100 MHz | 2 W | SILICON | R-PDSO-G4 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | STMICROELECTRONICS | compliant | EAR99 | SOT-223 | SMALL OUTLINE, R-PDSO-G4 | 4 | ||||||||||||||||||||
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BSP30-TAPE-13
NXP Semiconductors
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Check for Price | Obsolete | 60 V | 1 A | PNP | YES | SINGLE | 4 | 1 | 30 | 100 MHz | 20 pF | SILICON | 650 ns | 500 ns | 500 mV | R-PDSO-G4 | Not Qualified | 150 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NXP SEMICONDUCTORS | unknown | EAR99 | SMALL OUTLINE, R-PDSO-G4 | ||||||||||||||||||||||
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BSP300
Siemens
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Check for Price | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 800 V | 1 | 190 mA | 20 Ω | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 760 mA | SILICON | 64 ns | 35 ns | R-PDSO-G4 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | SIEMENS A G | unknown | EAR99 | ||||||||||||||||||||||
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BSP30
NXP Semiconductors
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Check for Price | Obsolete | 60 V | 1 A | PNP | YES | SINGLE | 4 | 1 | 30 | 100 MHz | 20 pF | SILICON | 650 ns | 500 ns | 500 mV | R-PDSO-G4 | Not Qualified | 150 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NXP SEMICONDUCTORS | unknown | EAR99 | SMALL OUTLINE, R-PDSO-G4 | ||||||||||||||||||||||
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BSP304AAMO
NXP Semiconductors
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Check for Price | Yes | Obsolete | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 300 V | 1 | 170 mA | 17 Ω | LOGIC LEVEL COMPATIBLE | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN | THROUGH-HOLE | BOTTOM | NXP SEMICONDUCTORS | unknown | EAR99 | TO-92 | CYLINDRICAL, O-PBCY-T3 | 3 | ||||||||||||||||||
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BSP300E6327
Infineon Technologies AG
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE | 4 | 800 V | 1 | 190 mA | 20 Ω | AVALANCHE RATED | 36 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.8 W | 760 mA | SILICON | R-PDSO-G4 | Not Qualified | 1 | 150 °C | 255 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | unknown | EAR99 | PLASTIC PACKAGE-4 | 4 | |||||||||||||||||
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BSP304T/R
NXP Semiconductors
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Check for Price | Obsolete | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 300 V | 1 | 170 mA | 17 Ω | LOGIC LEVEL COMPATIBLE | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | NXP SEMICONDUCTORS | compliant | EAR99 | ||||||||||||||||||||||
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BSP30T/R
NXP Semiconductors
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Check for Price | Obsolete | 60 V | 1 A | PNP | YES | SINGLE | 4 | 1 | 30 | 100 MHz | 20 pF | 2 W | SILICON | 650 ns | 500 ns | 500 mV | R-PDSO-G4 | Not Qualified | 150 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NXP SEMICONDUCTORS | compliant | EAR99 | SMALL OUTLINE, R-PDSO-G4 |