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BSP170PH6327XTSA1
Infineon Technologies AG
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$0.5198 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.9 A | 300 mΩ | AVALANCHE RATED | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.8 W | 7.6 A | SILICON | R-PDSO-G4 | e3 | AEC-Q101 | 1 | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G4 | 4 | compliant | EAR99 | Infineon | ||||
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BSP170PH6327
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.9 A | 300 mΩ | AVALANCHE RATED | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 7.6 A | SILICON | R-PDSO-G4 | e3 | AEC-Q101 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC PACKAGE-4 | 4 | compliant | EAR99 | Infineon | |||||||||
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BSP170P
Siemens
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Check for Price | Transferred | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.9 A | 300 mΩ | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 7.6 A | SILICON | R-PDSO-G4 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | SIEMENS A G | unknown | EAR99 | |||||||||||||||||
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BSP170PL6327
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.9 A | 300 mΩ | AVALANCHE RATED | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.8 W | 7.6 A | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G4 | 4 | compliant | EAR99 | ||||||
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BSP170P
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.9 A | 300 mΩ | AVALANCHE RATED | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.8 W | 7.6 A | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | PLASTIC PACKAGE-4 | 4 | compliant | EAR99 | Infineon | ||||
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BSP170PL6327HTSA1
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.9 A | 300 mΩ | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 7.6 A | SWITCHING | SILICON | R-PDSO-G4 | e3 | AEC-Q101 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC PACKAGE-4 | 4 | compliant | EAR99 | Infineon |