Parametric results for: blu6h0410ls under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 1

4 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 1

4 hits Apply

DS Breakdown Voltage-Min (1)

110 V 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

4 hits Apply

R-CDFP-F4 1

4 hits Apply

Manufacturer (2)

Ampleon 2 NXP Semiconductors 2

4 hits Apply

NOT APPLICABLE 1

4 hits Apply

Number of Elements (1)

2 1

4 hits Apply

Number of Terminals (1)

4 1

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

200.0 °C 1

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

FLATPACK 1

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

NOT SPECIFIED 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

4 hits Apply

Surface Mount (1)

YES 1

4 hits Apply