Parametric results for: blp25m710 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 1

5 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 1

5 hits Apply

DS Breakdown Voltage-Min (1)

65 V 1

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

5 hits Apply

Highest Frequency Band (1)

S BAND 1

5 hits Apply

MO-229 1

5 hits Apply

R-PDSO-N12 1

5 hits Apply

Manufacturer (2)

Ampleon 2 NXP Semiconductors 3

5 hits Apply

Number of Elements (1)

2 1

5 hits Apply

Number of Terminals (1)

12 1

5 hits Apply

ENHANCEMENT MODE 3

5 hits Apply

150.0 °C 2

5 hits Apply

PLASTIC/EPOXY 1

5 hits Apply

RECTANGULAR 1

5 hits Apply

SMALL OUTLINE 1

5 hits Apply

Active 1 Obsolete 3 Transferred 1

5 hits Apply

NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

5 hits Apply

Surface Mount (1)

YES 3

5 hits Apply