Parametric results for: bll6h1214ls-500 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 1

3 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 1

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

3 hits Apply

Highest Frequency Band (1)

L BAND 1

3 hits Apply

R-CDFP-F4 1

3 hits Apply

Manufacturer (2)

Ampleon 2 NXP Semiconductors 1

3 hits Apply

Number of Elements (1)

2 1

3 hits Apply

Number of Terminals (1)

4 1

3 hits Apply

ENHANCEMENT MODE 1

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

FLATPACK 1

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

3 hits Apply

Surface Mount (1)

YES 1

3 hits Apply