Parametric results for: blf278-2015 under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 4

9 hits Apply

SOURCE 5

9 hits Apply

Configuration (2)

COMMON SOURCE, 2 ELEMENTS 4 SINGLE 3

9 hits Apply

DS Breakdown Voltage-Min (1)

125 V 6

9 hits Apply

Drain Current-Max (ID) (2)

18 A 7 40 A 1

Min (A) - Max (A)

9 hits Apply

Drain-source On Resistance-Max (1)

300 mΩ 2

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

9 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 6

9 hits Apply

R-CDFM-F4 5

9 hits Apply

Manufacturer (6)

Advanced Semiconductor Inc 1 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 NXP Semiconductors 4 Philips Semiconductors 1 Rochester Electronics LLC 1

9 hits Apply

Number of Elements (2)

1 3 2 5

Min - Max

9 hits Apply

Number of Terminals (1)

4 5

9 hits Apply

ENHANCEMENT MODE 8

9 hits Apply

200.0 °C 5

9 hits Apply

CERAMIC, METAL-SEALED COFIRED 5

9 hits Apply

RECTANGULAR 5

9 hits Apply

FLANGE MOUNT 5

9 hits Apply

Active 3 Obsolete 4 Transferred 2

9 hits Apply

Yes 3

9 hits Apply

NOT SPECIFIED 4

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

9 hits Apply

500 W 2

9 hits Apply

500 W 5

9 hits Apply

Power Gain-Min (Gp) (1)

20.0 dB 2

9 hits Apply

Surface Mount (2)

NO 2 YES 5

9 hits Apply