Parametric results for: auirf7799l2tr under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

325.0 mJ 1

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

250 V 1

3 hits Apply

Drain Current-Max (ID) (2)

6.6 A 1 35 A 2

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

38 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-XBCC-N9 1

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 2

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

9 1

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

175.0 °C 3

3 hits Apply

UNSPECIFIED 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

CHIP CARRIER 1

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

125 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply