Parametric results for: atp20312 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

52.0 mJ 2

5 hits Apply

DRAIN 2

5 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

5 hits Apply

Drain Current-Max (ID) (1)

75 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

8.2 mΩ 2

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

R-PSSO-G2 2

5 hits Apply

e6 1

5 hits Apply

Manufacturer (3)

onsemi 2 SANYO Electric Co Ltd 1 SANYO Semiconductor Co Ltd 2

5 hits Apply

1 1

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

2 2

5 hits Apply

ENHANCEMENT MODE 3

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 2

5 hits Apply

RECTANGULAR 2

5 hits Apply

SMALL OUTLINE 2

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Yes 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

50 W 3

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply