Parametric results for: at25df256-mahn-t under Flash Memories
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AT25DF256-MAHN-T
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 1.8 V | 104 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | SERIAL | 1.8 V | DSPI | 3.6 V | 1.65 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-PDSO-N8 | 1 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NO LEAD | 500 µm | DUAL | 600 µm | 3 mm | 2 mm | RENESAS ELECTRONICS CORP | DFN | compliant | Renesas Electronics | |||||
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AT25DF256-MAHN-T
Dialog Semiconductor GmbH
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Check for Price | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 1.8 V | 104 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | SERIAL | 1.8 V | DSPI | 3.6 V | 1.65 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-PDSO-N8 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NO LEAD | 500 µm | DUAL | 600 µm | 3 mm | 2 mm | DIALOG SEMICONDUCTOR GMBH | compliant | |||||||||
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AT25DF256-MAHN-T
Adesto Technologies Corporation
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Check for Price | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 1.8 V | 104 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | SERIAL | 1.8 V | DSPI | 3.6 V | 1.65 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-PDSO-N8 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NO LEAD | 500 µm | DUAL | 600 µm | 3 mm | 2 mm | ADESTO TECHNOLOGIES CORP | compliant | UDFN-8 | EAR99 | 8542.32.00.51 |