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AT24C04D-SSHM-T
Microchip Technology Inc
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$0.2626 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 3 V | 1 MHz | EEPROM | 1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz | YES | 100 | 1000000 Write/Erase Cycles | 1010DDXR | 1 | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | 16 words | SERIAL | 3 V | I2C | 800 nA | 1 µA | 3.6 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.925 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | Microchip | ||||||||||||
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AT24C04D-SSHM-B
Microchip Technology Inc
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$0.2720 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 3 V | 1 MHz | EEPROM | 1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz | YES | 100 | 1000000 Write/Erase Cycles | 1010DDXR | 1 | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | 16 words | SERIAL | 3 V | I2C | 800 nA | 1 µA | 3.6 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.925 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | Microchip | ||||||||||
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AT24C04D-XHM-B
Microchip Technology Inc
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$0.2750 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 3 V | 1 MHz | EEPROM | 1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz | YES | 100 | 1000000 Write/Erase Cycles | 1010DDXR | 1 | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | 16 words | SERIAL | 3 V | I2C | 800 nA | 1 µA | 3.6 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | NICKEL PALLADIUM GOLD | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | compliant | Microchip | TSSOP-8 | |||||||||||
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AT24C04C-STUM-T
Microchip Technology Inc
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$0.2750 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 5 V | 1 MHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDXR | 1 | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 5 V | I2C | 6 µA | 3 µA | 5.5 V | 1.7 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G5 | e3 | 1 | 85 °C | -40 °C | 260 | 40 | 5 | PLASTIC/EPOXY | VSSOP | TSOP5/6,.11,37 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 950 µm | DUAL | 1 mm | 2.9 mm | 1.6 mm | MICROCHIP TECHNOLOGY INC | compliant | Microchip | SOT-23, 5 PIN | EAR99 | 8542.32.00.51 | 2016-12-07 | ||||||||||
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CAT24C04WI-GT3
onsemi
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$0.2783 | Yes | Active | 4.096 kbit | 1 | 4KX1 | 3.3 V | 400 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 4000 | 4.096 k | SYNCHRONOUS | SERIAL | I2C | 1 µA | 2 µA | 5.5 V | 1.7 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | ONSEMI | compliant | onsemi | SOIC-8 | EAR99 | 8542.32.00.51 | SOIC 8, 150 mils | 8 | 751BD | |||||||||||
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AT24C04C-SSHM-T
Microchip Technology Inc
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$0.2827 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 3 V | 1 MHz | EEPROM | ALSO OPERATES AT 1.7V TO 2.5V @0.4MHZ | 100 | 1000000 Write/Erase Cycles | 1010DDXR | 1 | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3 V | I2C | 6 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.92 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | Microchip | SOIC-8 | EAR99 | 8542.32.00.51 | 2016-12-07 | ||||||||
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CAT24C04YI-GT3
onsemi
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$0.2889 | Yes | Active | 4.096 kbit | 1 | 4KX1 | 3.3 V | 400 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 4000 | 4.096 k | SYNCHRONOUS | SERIAL | I2C | 1 µA | 2 µA | 5.5 V | 1.7 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | ONSEMI | compliant | onsemi | TSSOP-8 | EAR99 | 8542.32.00.51 | TSSOP8, 4.4x3 | 8 | 948AL | |||||||||||
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AT24C04C-XHM-B
Microchip Technology Inc
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$0.2935 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 3 V | 1 MHz | EEPROM | ALSO OPERATES AT 1.7V TO 2.5V @0.4MHZ | 100 | 1000000 Write/Erase Cycles | 1010DDXR | 1 | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3 V | I2C | 6 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | e4 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | NICKEL PALLADIUM GOLD | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | compliant | Microchip | TSSOP-8 | EAR99 | 8542.32.00.51 | 2016-12-07 | ||||||||
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AT24C04C-XHM-T
Microchip Technology Inc
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$0.2990 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 5 V | 1 MHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDXR | 1 | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 5 V | I2C | 6 µA | 3 µA | 5.5 V | 1.7 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | NICKEL PALLADIUM GOLD | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | compliant | Microchip | TSSOP-8 | EAR99 | 8542.32.00.51 | 2016-12-07 | ||||||||||
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AT24C04D-MAHM-E
Microchip Technology Inc
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$0.3040 | Yes | Active | 4.096 kbit | 8 | 512X8 | 3 V | 1 MHz | EEPROM | 1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz | YES | 100 | 1000000 Write/Erase Cycles | 1010DDXR | 1 | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | 16 words | SERIAL | 3 V | I2C | 800 nA | 1 µA | 3.6 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-N8 | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NICKEL PALLADIUM GOLD | NO LEAD | 500 µm | DUAL | 600 µm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | compliant | Microchip | UDFN-8 | EAR99 | 8542.32.00.51 |