Parametric results for: asi1010 under RF Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Collector Current-Max (IC) (1)

1 A 1

1 hit Apply

10 pF 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

35 V 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 1

1 hit Apply

DC Current Gain-Min (hFE) (1)

15.0 1

1 hit Apply

Highest Frequency Band (1)

L BAND 1

1 hit Apply

O-CRFM-F2 1

1 hit Apply

Manufacturer (1)

Advanced Semiconductor Inc 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

2 1

1 hit Apply

200.0 °C 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

1 hit Apply

ROUND 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Active 1

1 hit Apply

Polarity/Channel Type (1)

NPN 1

1 hit Apply

29 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply