Parametric results for: apt1002rbnr under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

800.0 mJ 6

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 6

6 hits Apply

Drain Current-Max (ID) (1)

7 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

2 Ω 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-247 2 TO-247AD 2

6 hits Apply

R-PSFM-G3 2 R-PSFM-T3 4

6 hits Apply

e0 2

6 hits Apply

Manufacturer (2)

Advanced Power Technology 3 Microsemi Corporation 3

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 6

6 hits Apply

Obsolete 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

240 W 6

6 hits Apply

240 W 2

6 hits Apply

Surface Mount (2)

NO 4 YES 2

6 hits Apply