Parametric results for: apt1002rbn under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

800.0 mJ 6

13 hits Apply

DRAIN 13

13 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 13

13 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 13

13 hits Apply

Drain Current-Max (ID) (1)

7 A 13

13 hits Apply

Drain-source On Resistance-Max (1)

2 Ω 13

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

120 pF 5

13 hits Apply

TO-247 4 TO-247AD 5

13 hits Apply

R-PSFM-G3 4 R-PSFM-T3 9

13 hits Apply

e0 3 e1 1

13 hits Apply

Manufacturer (2)

Advanced Power Technology 6 Microsemi Corporation 7

13 hits Apply

Number of Elements (1)

1 13

13 hits Apply

Number of Terminals (1)

3 13

13 hits Apply

ENHANCEMENT MODE 13

13 hits Apply

150.0 °C 13

13 hits Apply

-55.0 °C 3

13 hits Apply

PLASTIC/EPOXY 13

13 hits Apply

RECTANGULAR 13

13 hits Apply

FLANGE MOUNT 13

13 hits Apply

Obsolete 13

13 hits Apply

No 1 Yes 1

13 hits Apply

NOT SPECIFIED 1

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

13 hits Apply

240 W 11

13 hits Apply

240 W 3

13 hits Apply

Surface Mount (2)

NO 9 YES 4

13 hits Apply