Parametric results for: apt1001rbvfr under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 4

4 hits Apply

1210.0 mJ 4

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 4

4 hits Apply

Drain Current-Max (ID) (1)

11 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

1 Ω 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-247AD 4

4 hits Apply

R-PSFM-T3 4

4 hits Apply

e0 1 e1 2

4 hits Apply

Manufacturer (3)

Advanced Power Technology 1 Microchip Technology Inc 1 Microsemi Corporation 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 1 Transferred 3

4 hits Apply

No 1 Yes 1

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

280 W 2

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply