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AM29DL323DB70RWDI
AMD
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 8K,64K | 2MX16 | 3.3 V | 70 ns | FLASH | MINIMUM 1000K PROGRAM/ERASE CYCLE; 20 YEAR DATA RETENTION | 8 | BOTTOM | YES | YES | YES | 20 | 1 | 8,63 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 45 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B63 | Not Qualified | e0 | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | TFBGA | BGA63,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | ADVANCED MICRO DEVICES INC | BGA | TFBGA, BGA63,8X12,32 | 63 | unknown | EAR99 | 8542.32.00.51 | |||||
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AM29DL323DB70RWDI
Spansion
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 8K,64K | 2MX16 | 3.3 V | 70 ns | FLASH | 8 | BOTTOM | YES | YES | YES | 1 | 8,63 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 45 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B63 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 260 | 63 | PLASTIC/EPOXY | TFBGA | BGA63,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | SPANSION INC | BGA | 8 X 14 MM, 0.80 MM PITCH, FBGA-63 | 63 | not_compliant | EAR99 | 8542.32.00.51 | |||||
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AM29DL323DB70RWDIN
Cypress Semiconductor
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Check for Price | No | Active | 33.5544 Mbit | 8K,64K | 2MX16 | 3.3 V | 3.3 V | 70 ns | FLASH | 8 | BOTTOM | YES | YES | YES | 8,63 | 2000000 | 2.0972 M | PARALLEL | YES | 5 µA | 45 µA | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B63 | Not Qualified | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | FBGA | BGA63,8X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | CYPRESS SEMICONDUCTOR CORP | compliant | ||||||||||||||||||||||
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AM29DL323DB70REIN
Spansion
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 8K,64K | 2MX16 | 3.3 V | 70 ns | FLASH | 8 | BOTTOM | YES | YES | YES | 1 | 8,63 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 45 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G48 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 260 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | SPANSION INC | TSOP1 | MO-142DD, TSOP-48 | 48 | not_compliant | EAR99 | 8542.32.00.51 | |||||
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AM29DL323DB70REI
Cypress Semiconductor
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Check for Price | No | Active | 33.5544 Mbit | 8K,64K | 2MX16 | 3.3 V | 3.3 V | 70 ns | FLASH | 8 | BOTTOM | YES | YES | YES | 8,63 | 2000000 | 2.0972 M | PARALLEL | YES | 5 µA | 45 µA | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | CYPRESS SEMICONDUCTOR CORP | compliant | ||||||||||||||||||||||
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AM29DL323DB70RWDIN
AMD
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 8K,64K | 2MX16 | 3.3 V | 70 ns | FLASH | MINIMUM 1000K PROGRAM/ERASE CYCLE; 20 YEAR DATA RETENTION | 8 | BOTTOM | YES | YES | YES | 20 | 1 | 8,63 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 45 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B63 | Not Qualified | e0 | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | TFBGA | BGA63,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | ADVANCED MICRO DEVICES INC | BGA | TFBGA, BGA63,8X12,32 | 63 | unknown | EAR99 | 8542.32.00.51 | |||||
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AM29DL323DB70REI
AMD
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 8K,64K | 2MX16 | 3.3 V | 70 ns | FLASH | MINIMUM 1000K PROGRAM/ERASE CYCLE; 20 YEAR DATA RETENTION | 8 | BOTTOM | YES | YES | YES | 20 | 1 | 8,63 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 45 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G48 | Not Qualified | e0 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | ADVANCED MICRO DEVICES INC | TSOP1 | TSOP1, TSSOP48,.8,20 | 48 | unknown | EAR99 | 8542.32.00.51 | |||||
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AM29DL323DB70RWDIN
Spansion
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 8K,64K | 2MX16 | 3.3 V | 70 ns | FLASH | 8 | BOTTOM | YES | YES | YES | 1 | 8,63 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 45 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B63 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 260 | 63 | PLASTIC/EPOXY | TFBGA | BGA63,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | SPANSION INC | BGA | 8 X 14 MM, 0.80 MM PITCH, FBGA-63 | 63 | not_compliant | EAR99 | 8542.32.00.51 | |||||
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AM29DL323DB70REIN
AMD
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 8K,64K | 2MX16 | 3.3 V | 70 ns | FLASH | MINIMUM 1000K PROGRAM/ERASE CYCLE; 20 YEAR DATA RETENTION | 8 | BOTTOM | YES | YES | YES | 20 | 1 | 8,63 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 45 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G48 | Not Qualified | e0 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | ADVANCED MICRO DEVICES INC | TSOP1 | TSOP1, TSSOP48,.8,20 | 48 | unknown | EAR99 | 8542.32.00.51 | |||||
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AM29DL323DB70REIN
Cypress Semiconductor
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Check for Price | No | Active | 33.5544 Mbit | 8K,64K | 2MX16 | 3.3 V | 3.3 V | 70 ns | FLASH | 8 | BOTTOM | YES | YES | YES | 8,63 | 2000000 | 2.0972 M | PARALLEL | YES | 5 µA | 45 µA | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | CYPRESS SEMICONDUCTOR CORP | compliant |