Parametric results for: agr21180xf under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 8

8 hits Apply

SOURCE 8

8 hits Apply

Configuration (1)

SINGLE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

65 V 8

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

Highest Frequency Band (1)

S BAND 8

8 hits Apply

R-CDFM-F4 5 R-CDFP-F4 3

8 hits Apply

e0 4

8 hits Apply

Manufacturer (5)

Avago Technologies 2 Broadcom Limited 2 LSI Corporation 2 Qorvo 1 TriQuint Semiconductor 1

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

4 8

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 5 200.0 °C 1

Min (°C) - Max (°C)

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 8

8 hits Apply

RECTANGULAR 8

8 hits Apply

FLANGE MOUNT 5 FLATPACK 3

8 hits Apply

Active 4 Obsolete 1 Transferred 3

8 hits Apply

No 2

8 hits Apply

225 4 NOT SPECIFIED 1

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

500 W 5

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply