Parametric results for: af4w under Other Transistors

All Filters Additional Feature Analog IC - Other Type Collector Current-Max (IC) Configuration DC Current Gain-Min (hFE) DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Length Manufacturer Number of Elements Number of Functions Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Output Current-Max Package Body Material Package Code Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

LOW LEAKAGE CURRENT 2

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TWO TERMINAL VOLTAGE REFERENCE 4

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Collector Current-Max (IC) (4)

100 mA 1 500 mA 3 600 mA 6 3 A 1

Min (A) - Max (A)

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Configuration (3)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 22 SINGLE 74 SINGLE WITH BUILT-IN DIODE 32

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DC Current Gain-Min (hFE) (5)

20.0 1 40.0 1 50.0 2 100.0 4 300.0 2

Min - Max

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DS Breakdown Voltage-Min (4)

20 V 4 30 V 40 35 V 4 60 V 6

Min (V) - Max (V)

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Drain Current-Max (ID) (20)

5 A 8 5.2 A 16 6.8 A 2 6.9 A 8 7.3 A 4 7.7 A 4 8 A 12 8.2 A 4 8.5 A 8 9.5 A 28 10 A 24 10.2 A 8 10.7 A 4 11 A 10 11.5 A 8 13.5 A 8 14 A 4 15 A 8 18 A 12 30 A 2

Min (A) - Max (A)

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Drain-source On Resistance-Max (14)

3.2 mΩ 4 5 mΩ 4 9 mΩ 4 13.5 mΩ 4 14 mΩ 4 18 mΩ 4 20 mΩ 8 24 mΩ 4 26 mΩ 2 28 mΩ 2 30 mΩ 4 50 mΩ 4 53 mΩ 4 100 mΩ 2

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 182

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TO-252 4

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R-PDIP-T8 2 R-PDSO-F2 2 R-PDSO-G8 48 R-PSSO-G2 4 R-XUUC-N 3 R-XXMA-N22 1 X-XUUC-N 6

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e0 72

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32 mm 1

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Manufacturer (15)

Advanced Thermal Products Inc 1 Anachip Corporation 74 ATP Electronics Inc 12 Diodes Incorporated 72 Fairchild Semiconductor Corporation 11 Hamamatsu Photonics 3 Integrated Circuit Technology Corp 54 International Rectifier 6 Kodenshi Corporation 2 Kodenshi Sensing 2 Shoulder Electronics Ltd 2 Surge Components Inc 1 Suzhou Good-Ark Electronics Co Ltd 1 Telcona AG 2 Vanlong Technology Co Ltd 18

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Number of Elements (2)

1 106 2 22

Min - Max

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1.0 12

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Number of Terminals (5)

2 6 22 1 3 4 6 6 8 50

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ASYNCHRONOUS 2 ENHANCEMENT MODE 182

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70.0 °C 1 85.0 °C 13 150.0 °C 139

Min (°C) - Max (°C)

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-55.0 °C 2 -40.0 °C 11 -25.0 °C 2 0.0 °C 1

Min (°C) - Max (°C)

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100 mA 4 1 A 2

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PLASTIC/EPOXY 60 UNSPECIFIED 10

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DIE 8

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RECTANGULAR 60 UNSPECIFIED 6

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IN-LINE 2 MICROELECTRONIC ASSEMBLY 1 SMALL OUTLINE 54 UNCASED CHIP 9

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Active 8 Contact Manufacturer 34 Obsolete 145 Transferred 74

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Yes 2

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260 64

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Polarity/Channel Type (5)

N-CHANNEL 56 N-CHANNEL AND P-CHANNEL 16 NPN 5 P-CHANNEL 110 PNP 6

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225 mW 2 350 mW 1 625 mW 2 700 mW 1 1.5 W 2 2 W 9 2.1 W 40 2.5 W 8 3.1 W 72

Min (W) - Max (W)

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Surface Mount (2)

NO 4 YES 205

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Transition Frequency-Nom (fT) (6)

50 MHz 1 100 MHz 1 200 MHz 2 250 MHz 1 300 MHz 2 500 MHz 1

Min (MHz) - Max (MHz)

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