Parametric results for: af1332nu under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 8 SINGLE WITH BUILT-IN DIODE 4

12 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

12 hits Apply

Drain Current-Max (ID) (1)

600 mA 12

12 hits Apply

Drain-source On Resistance-Max (1)

600 mΩ 4

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

R-PDSO-G3 4

12 hits Apply

e0 4

12 hits Apply

Manufacturer (3)

Anachip Corporation 4 Diodes Incorporated 4 Integrated Circuit Technology Corp 4

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

3 4

12 hits Apply

ENHANCEMENT MODE 12

12 hits Apply

150.0 °C 8

12 hits Apply

PLASTIC/EPOXY 4

12 hits Apply

RECTANGULAR 4

12 hits Apply

SMALL OUTLINE 4

12 hits Apply

Obsolete 8 Transferred 4

12 hits Apply

260 4

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

350 mW 8

12 hits Apply

Surface Mount (1)

YES 12

12 hits Apply