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ADC10DV200CISQ/NOPB
Texas Instruments
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$64.2081 | Yes | Yes | Active | 1.8 V | 1.5 V | 2 | 0.0898 % | 10 | 200 MHz | 5 ns | YES | ADC, PROPRIETARY METHOD | Peak-to-peak input voltage range(V) : 1.5 | -1.5 V | 1 | OFFSET BINARY, 2'S COMPLEMENT BINARY | SAMPLE | 184 mA | CMOS | INDUSTRIAL | PARALLEL, WORD | S-PQCC-N60 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 60 | PLASTIC/EPOXY | HVQCCN | LCC60,.35SQ,20 | SQUARE | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | MATTE TIN | NO LEAD | 500 µm | QUAD | 9 mm | 800 µm | 9 mm | TEXAS INSTRUMENTS INC | QFN | HVQCCN, LCC60,.35SQ,20 | 60 | compliant | 8542.39.00.01 | |||
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ADC10DV200CISQE/NOPB
Texas Instruments
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$68.5674 | Yes | Yes | Active | 1.8 V | 1.5 V | 2 | 0.0898 % | 10 | 200 MHz | 5 ns | YES | ADC, PROPRIETARY METHOD | Peak-to-peak input voltage range(V) : 1.5 | -1.5 V | 1 | OFFSET BINARY, 2'S COMPLEMENT BINARY | SAMPLE | 184 mA | CMOS | INDUSTRIAL | PARALLEL, WORD | S-PQCC-N60 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 60 | PLASTIC/EPOXY | HVQCCN | LCC60,.35SQ,20 | SQUARE | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | MATTE TIN | NO LEAD | 500 µm | QUAD | 9 mm | 800 µm | 9 mm | TEXAS INSTRUMENTS INC | QFN | LLP-60 | 60 | compliant | 8542.39.00.01 | Texas Instruments | ||
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ADC10DV200CISQE
National Semiconductor Corporation
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Check for Price | Transferred | 1.8 V | 2 | 0.0898 % | 10 | 200 MHz | YES | ADC, PROPRIETARY METHOD | 1 | OFFSET BINARY, 2'S COMPLEMENT BINARY | SAMPLE | CMOS | INDUSTRIAL | PARALLEL, WORD | S-XQCC-N60 | Not Qualified | 85 °C | -40 °C | 60 | UNSPECIFIED | HVQCCN | LCC60,.35SQ,20 | SQUARE | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | NO LEAD | 500 µm | QUAD | 9 mm | 800 µm | 9 mm | NATIONAL SEMICONDUCTOR CORP | HVQCCN, LCC60,.35SQ,20 | unknown | 8542.39.00.01 | |||||||||||||||||
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ADC10DV200CISQE
Texas Instruments
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Check for Price | Obsolete | 1.8 V | 2 | 0.0898 % | 10 | 200 MHz | 5 ns | YES | ADC, PROPRIETARY METHOD | 1 | OFFSET BINARY, 2'S COMPLEMENT BINARY | SAMPLE | CMOS | INDUSTRIAL | PARALLEL, WORD | S-XQCC-N60 | 85 °C | -40 °C | 60 | UNSPECIFIED | HVQCCN | SQUARE | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | NO LEAD | 500 µm | QUAD | 9 mm | 800 µm | 9 mm | TEXAS INSTRUMENTS INC | QFN | HVQCCN, | 60 | unknown | 8542.39.00.01 | ||||||||||||||||
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ADC10DV200CISQ
National Semiconductor Corporation
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Check for Price | No | Transferred | 1.8 V | 2 | 0.0898 % | 10 | 200 MHz | YES | ADC, PROPRIETARY METHOD | 1 | OFFSET BINARY, 2'S COMPLEMENT BINARY | SAMPLE | CMOS | INDUSTRIAL | PARALLEL, WORD | S-XQCC-N60 | Not Qualified | 1 | 85 °C | -40 °C | 60 | UNSPECIFIED | HVQCCN | LCC60,.35SQ,20 | SQUARE | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | NO LEAD | 500 µm | QUAD | 9 mm | 800 µm | 9 mm | NATIONAL SEMICONDUCTOR CORP | HVQCCN, LCC60,.35SQ,20 | compliant | 8542.39.00.01 | |||||||||||||||
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ADC10DV200CISQ
Texas Instruments
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Check for Price | Obsolete | 1.8 V | 2 | 0.0898 % | 10 | 200 MHz | 5 ns | YES | ADC, PROPRIETARY METHOD | 1 | OFFSET BINARY, 2'S COMPLEMENT BINARY | SAMPLE | CMOS | INDUSTRIAL | PARALLEL, WORD | S-XQCC-N60 | 85 °C | -40 °C | 60 | UNSPECIFIED | HVQCCN | SQUARE | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | NO LEAD | 500 µm | QUAD | 9 mm | 800 µm | 9 mm | TEXAS INSTRUMENTS INC | QFN | HVQCCN, | 60 | unknown | 8542.39.00.01 | ||||||||||||||||
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ADC10DV200CISQE/NOPB
National Semiconductor Corporation
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Check for Price | Yes | Transferred | 1.8 V | 1 | 0.09 % | 10 | YES | A/D CONVERTER | 2 | OFFSET BINARY, 2'S COMPLEMENT BINARY | CMOS | INDUSTRIAL | S-PQCC-N60 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 60 | PLASTIC/EPOXY | QCCN | LCC60,.35SQ,20 | SQUARE | CHIP CARRIER | MATTE TIN | NO LEAD | 500 µm | QUAD | NATIONAL SEMICONDUCTOR CORP | compliant |