Parametric results for: ZVN4106F under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 13

14 hits Apply

DS Breakdown Voltage-Min (1)

60 V 13

14 hits Apply

Drain Current-Max (ID) (1)

200 mA 13

14 hits Apply

Drain-source On Resistance-Max (1)

2.5 Ω 13

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

14 hits Apply

8 pF 13

14 hits Apply

R-PDSO-G3 13

14 hits Apply

e3 10

14 hits Apply

Manufacturer (3)

Diodes Incorporated 7 Plessey Semiconductors Ltd 1 Zetex / Diodes Inc 6

14 hits Apply

1 10

14 hits Apply

Number of Elements (1)

1 13

14 hits Apply

Number of Terminals (1)

3 13

14 hits Apply

ENHANCEMENT MODE 13

14 hits Apply

150.0 °C 8

14 hits Apply

-55.0 °C 1

14 hits Apply

PLASTIC/EPOXY 13

14 hits Apply

RECTANGULAR 13

14 hits Apply

SMALL OUTLINE 13

14 hits Apply

Active 3 Obsolete 5 Transferred 6

14 hits Apply

Yes 1

14 hits Apply

260 6 NOT SPECIFIED 2

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

14 hits Apply

250 mW 2 350 mW 1

Min (W) - Max (W)

14 hits Apply

Surface Mount (1)

YES 13

14 hits Apply