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Parametric results for: X28HC256 under EEPROMs

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Manufacturer Part Number: x28hc256
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X28HC256JM-90T1
 Intersil Corporation 		Check for Price No Obsolete 262.144 kbit 8 32KX8 5 V 90 ns EEPROM 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION NO YES 100 1000000 Write/Erase Cycles 1 32000 32.768 k ASYNCHRONOUS 128 words PARALLEL 5 V 500 µA 60 µA 5.5 V 4.5 V CMOS MILITARY YES 5 ms R-PQCC-J32 Not Qualified e0 3 125 °C -55 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm INTERSIL CORP QFJ QCCJ, LDCC32,.5X.6 32 not_compliant 3A001.A.2.C 8542.32.00.51
MYXX28HC256ECJ-15IT
 Micross Components 		Check for Price Active 262.144 kbit 8 32KX8 5 V 150 ns EEPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 5 V 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms R-CQCC-J32 85 °C -40 °C 32 CERAMIC, METAL-SEALED COFIRED QCCJ RECTANGULAR CHIP CARRIER YES J BEND 1.27 mm QUAD 3.81 mm 13.97 mm 11.43 mm MICROSS COMPONENTS SOJ-32 compliant EAR99 8542.32.00.51
X28HC256JIZ-15T
 Renesas Electronics Corporation 		Check for Price Yes Active EEPROM 5 V e3 MATTE TIN RENESAS ELECTRONICS CORP , compliant EAR99 8542.32.00.51
X28HC256SM-12T1
 Xicor Inc 		Check for Price Transferred 262.144 kbit 8 32KX8 5 V 120 ns EEPROM 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION 100 100000 Write/Erase Cycles 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 5 V 5.5 V 4.5 V CMOS MILITARY 5 ms R-PDSO-G28 Not Qualified 125 °C -55 °C 28 PLASTIC/EPOXY SOP RECTANGULAR SMALL OUTLINE YES GULL WING 1.27 mm DUAL 2.65 mm 17.9 mm 7.5 mm XICOR INC SOP, unknown
X28HC256P-90
 Intersil Corporation 		Check for Price No Obsolete 262.144 kbit 8 32KX8 5 V 90 ns EEPROM 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION NO YES 100 1000000 Write/Erase Cycles 1 32000 32.768 k ASYNCHRONOUS 128 words PARALLEL 5 V 500 µA 60 µA 5.5 V 4.5 V CMOS COMMERCIAL YES 5 ms R-PDIP-T28 Not Qualified e0 70 °C 28 PLASTIC/EPOXY DIP DIP28,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 6.35 mm 37.4 mm 15.24 mm INTERSIL CORP DIP PLASTIC, MS-011AB, DIP-28 28 not_compliant EAR99 8542.32.00.51
X28HC256JI-70
 Intersil Corporation 		Check for Price No Obsolete 262.144 kbit 8 32KX8 5 V 70 ns EEPROM NO YES 1000000 Write/Erase Cycles 1 32000 32.768 k ASYNCHRONOUS 128 words PARALLEL 5 V 500 µA 60 µA 5.5 V 4.5 V CMOS INDUSTRIAL YES 5 ms R-PQCC-J32 Not Qualified e0 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm INTERSIL CORP QFJ PLASTIC, LCC-32 32 not_compliant EAR99 8542.32.00.51
X28HC256J-70
 Intersil Corporation 		Check for Price No Obsolete 262.144 kbit 8 32KX8 5 V 70 ns EEPROM NO YES 1000000 Write/Erase Cycles 1 32000 32.768 k ASYNCHRONOUS 128 words PARALLEL 5 V 500 µA 60 µA 5.5 V 4.5 V CMOS COMMERCIAL YES 5 ms R-PQCC-J32 Not Qualified e0 70 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm INTERSIL CORP QFJ PLASTIC, LCC-32 32 not_compliant EAR99 8542.32.00.51
X28HC256EMB-12
 Xicor Inc 		Check for Price No Transferred 262.144 kbit 8 32KX8 5 V 120 ns EEPROM 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION NO YES 100 1000000 Write/Erase Cycles 1 32000 32.768 k ASYNCHRONOUS 3-STATE 128 words PARALLEL 5 V 500 µA 60 µA 5.5 V 4.5 V CMOS MILITARY YES 5 ms R-CQCC-N32 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 32 CERAMIC, METAL-SEALED COFIRED QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES Tin/Lead (Sn/Pb) NO LEAD 1.27 mm QUAD 3.048 mm 13.97 mm 11.43 mm XICOR INC QCCN, LCC32,.45X.55 unknown
MYXX28HC256CW-15IT
 Micross Components 		Check for Price Active 262.144 kbit 8 32KX8 5 V 150 ns EEPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 5 V 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms R-CDIP-T28 85 °C -40 °C 28 CERAMIC, METAL-SEALED COFIRED DIP RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 4.82 mm 36.32 mm 15.24 mm MICROSS COMPONENTS DIP-28 compliant EAR99 8542.32.00.51
X28HC256DI-15C7846
 Intersil Corporation 		Check for Price No Obsolete 262.144 kbit 8 32KX8 5 V 150 ns EEPROM NO YES 100 1000000 Write/Erase Cycles 1 32000 32.768 k ASYNCHRONOUS 3-STATE 128 words PARALLEL 5 V 500 µA 60 µA 5.5 V 4.5 V CMOS INDUSTRIAL YES 5 ms R-GDIP-T28 Not Qualified e0 85 °C -40 °C 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.92 mm 15.24 mm INTERSIL CORP DIP DIP, DIP28,.6 28 not_compliant EAR99 8542.32.00.51
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