Parametric results for: WED416S16030C75SI under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 3

3 hits Apply

Access Time-Max (1)

6 ns 3

3 hits Apply

AUTO/SELF REFRESH 3

3 hits Apply

Clock Frequency-Max (fCLK) (1)

133 MHz 1

3 hits Apply

COMMON 1

3 hits Apply

1,2,4,8 1

3 hits Apply

R-PDSO-G54 3

3 hits Apply

22.225 mm 3

3 hits Apply

Manufacturer (3)

Mercury Systems Inc 1 Microsemi Corporation 1 White Electronic Designs Corp 1

3 hits Apply

Memory Density (1)

268.4355 Mbit 3

3 hits Apply

SYNCHRONOUS DRAM 3

3 hits Apply

Memory Width (1)

16 3

3 hits Apply

1.0 3

3 hits Apply

1 3

3 hits Apply

54 3

3 hits Apply

16.7772 M 3

3 hits Apply

1.6E7 3

3 hits Apply

SYNCHRONOUS 3

3 hits Apply

85.0 °C 3

3 hits Apply

-40.0 °C 3

3 hits Apply

Organization (1)

16MX16 3

3 hits Apply

3-STATE 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

TSOP2 3

3 hits Apply

TSOP54,.46,32 1

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE, THIN PROFILE 3

3 hits Apply

Refresh Cycles (1)

8192 1

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 3

3 hits Apply