Parametric results for: VRF157FL under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 6

8 hits Apply

Configuration (1)

SINGLE 6

8 hits Apply

DS Breakdown Voltage-Min (1)

170 V 6

8 hits Apply

Drain Current-Max (ID) (1)

60 A 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

8 hits Apply

65 pF 4

8 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 6

8 hits Apply

R-CDFM-F2 6

8 hits Apply

e1 2

8 hits Apply

Manufacturer (2)

Microchip Technology Inc 4 Microsemi Corporation 4

8 hits Apply

Number of Elements (1)

1 6

8 hits Apply

Number of Terminals (1)

2 6

8 hits Apply

ENHANCEMENT MODE 6

8 hits Apply

200.0 °C 6

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

FLANGE MOUNT 6

8 hits Apply

Active 4 Transferred 4

8 hits Apply

NOT SPECIFIED 3

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

8 hits Apply

Power Gain-Min (Gp) (1)

17.0 dB 2

8 hits Apply

Surface Mount (1)

YES 6

8 hits Apply