Parametric results for: VN2222LLG under Small Signal Field-Effect Transistors

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Manufacturer Part Number: vn2222llg
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VN2222LL-G
Microchip Technology Inc
$0.3149 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 230 mA 7.5 Ω 8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99 8541.29.00.95 Microchip
VN2222LL-GP003
Microchip Technology Inc
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 230 mA 7.5 Ω 8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99 8541.29.00.95 CYLINDRICAL, O-PBCY-T3
VN2222LL-GP014
Microchip Technology Inc
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 230 mA 7.5 Ω 8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99
VN2222LL-GP013
Microchip Technology Inc
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 230 mA 7.5 Ω 8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99 8541.29.00.95
VN2222LL-G
Supertex Inc
Check for Price Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 230 mA 7.5 Ω LOW THRESHOLD 8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-W3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN WIRE BOTTOM SUPERTEX INC compliant EAR99 GREEN PACKAGE-3 TO-92 3
VN2222LL-GP002
Microchip Technology Inc
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 230 mA 7.5 Ω 8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 e3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99
VN2222LL-GP005
Microchip Technology Inc
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 230 mA 7.5 Ω 8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99
VN2222LLG
onsemi
Check for Price Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 150 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e1 Not Qualified 150 °C 260 10 PLASTIC/EPOXY ROUND CYLINDRICAL TIN SILVER COPPER THROUGH-HOLE BOTTOM ONSEMI compliant EAR99 onsemi CASE 29-11, 3 PIN TO-92 (TO-226) 5.33mm Body Height 3 29-11