Parametric results for: VN10KN3-G under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW THRESHOLD 1

16 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 7

16 hits Apply

DS Breakdown Voltage-Min (1)

60 V 7

16 hits Apply

Drain Current-Max (ID) (1)

310 mA 7

16 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 7

16 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

16 hits Apply

5 pF 7

16 hits Apply

TO-92 7

16 hits Apply

O-PBCY-T3 6 O-PBCY-W3 1

16 hits Apply

e3 2

16 hits Apply

Manufacturer (2)

Microchip Technology Inc 6 Supertex Inc 10

16 hits Apply

1 1

16 hits Apply

Number of Elements (1)

1 7

16 hits Apply

Number of Terminals (1)

3 7

16 hits Apply

ENHANCEMENT MODE 7

16 hits Apply

150.0 °C 6

16 hits Apply

-55.0 °C 1

16 hits Apply

PLASTIC/EPOXY 7

16 hits Apply

ROUND 7

16 hits Apply

CYLINDRICAL 7

16 hits Apply

Active 6 Obsolete 1 Transferred 9

16 hits Apply

Yes 1

16 hits Apply

260 1 NOT SPECIFIED 5

16 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

16 hits Apply

1 W 6

16 hits Apply

Surface Mount (1)

NO 7

16 hits Apply