Parametric results for: VN0610LL under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (3)

SINGLE 5 Single 2 SINGLE WITH BUILT-IN DIODE 1

8 hits Apply

DS Breakdown Voltage-Min (1)

60 V 1

8 hits Apply

Drain Current-Max (Abs) (ID) (1)

190 mA 2

8 hits Apply

Drain Current-Max (ID) (2)

190 mA 5 280 mA 1

Min (A) - Max (A)

8 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 1

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

5 pF 1

8 hits Apply

TO-92 1

8 hits Apply

O-PBCY-T3 1

8 hits Apply

e0 6

8 hits Apply

Manufacturer (7)

Exar Corporation 1 Freescale Semiconductor 2 Motorola Semiconductor Products 1 Sipex Corporation 1 Telcom Semiconductor Inc 1 Telefunken Microelectronics Gmbh 1 Topaz Semiconductor 1

8 hits Apply

Number of Elements (1)

1 6

8 hits Apply

Number of Terminals (1)

3 1

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 8

8 hits Apply

PLASTIC/EPOXY 1

8 hits Apply

ROUND 1

8 hits Apply

CYLINDRICAL 1

8 hits Apply

Obsolete 5 Transferred 3

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

400 mW 7 800 mW 1

Min (W) - Max (W)

8 hits Apply

Surface Mount (1)

NO 8

8 hits Apply