Parametric results for: UPD42S17100LV-A80 under DRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

80 ns 1

1 hit Apply

SEPARATE 1

1 hit Apply

R-PZIP-T24 1

1 hit Apply

e0 1

1 hit Apply

Manufacturer (1)

Renesas Electronics Corporation 1

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Memory Density (1)

16.7772 Mbit 1

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FAST PAGE DRAM 1

1 hit Apply

Memory Width (1)

1 1

1 hit Apply

24 1

1 hit Apply

16.7772 M 1

1 hit Apply

1.6E7 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

16MX1 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

ZIP 1

1 hit Apply

ZIP24,.1 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

IN-LINE 1

1 hit Apply

Refresh Cycles (1)

2048 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply