Parametric results for: UPA1812 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

5 hits Apply

Drain Current-Max (ID) (1)

5 A 2

5 hits Apply

Drain-source On Resistance-Max (1)

69 mΩ 2

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

5 hits Apply

R-PDSO-G8 2

5 hits Apply

e0 1 e6 2

5 hits Apply

Manufacturer (2)

NEC Electronics Group 1 Renesas Electronics Corporation 4

5 hits Apply

Number of Elements (1)

1 2

5 hits Apply

Number of Terminals (1)

8 2

5 hits Apply

ENHANCEMENT MODE 2

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 2

5 hits Apply

RECTANGULAR 2

5 hits Apply

SMALL OUTLINE 2

5 hits Apply

Obsolete 5

5 hits Apply

Yes 2

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

5 hits Apply

2 W 1

5 hits Apply

Surface Mount (1)

YES 2

5 hits Apply