Parametric results for: UPA1501H under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

COMPLEX 4

4 hits Apply

DS Breakdown Voltage-Min (1)

120 V 4

4 hits Apply

Drain Current-Max (ID) (1)

3 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

650 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSIP-T12 4

4 hits Apply

e0 2

4 hits Apply

Manufacturer (2)

NEC Electronics Group 2 Renesas Electronics Corporation 2

4 hits Apply

Number of Elements (1)

4 4

4 hits Apply

Number of Terminals (1)

12 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 4

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

260 1 NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

4 W 2

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply