Parametric results for: UMH11N under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BAIS RESISTOR RATIO IS 1 1 BUILT IN BIAS RESISTANCE RATIO IS 1 1 BUILT IN BIAS RESISTOR RATIO IS 1 1 BUILT-IN BIAS RESISTOR RATIO IS 1 2 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 2

19 hits Apply

Collector Current-Max (IC) (2)

50 mA 5 100 mA 2

Min (A) - Max (A)

19 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 6

19 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 7

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DC Current Gain-Min (hFE) (1)

30.0 7

19 hits Apply

R-PDSO-G6 7

19 hits Apply

e0 2 e2 5 e3 2

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Manufacturer (6)

Galaxy Microelectronics 1 Jiangsu Changjiang Electronics Technology Co Ltd 1 Micro Commercial Components 7 ROHM Semiconductor 6 Secos Corporation 1 Taiwan Semiconductor 3

19 hits Apply

1 6

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Number of Elements (1)

2 8

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Number of Terminals (1)

6 7

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150.0 °C 2

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PLASTIC/EPOXY 7

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RECTANGULAR 7

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SMALL OUTLINE 7

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Active 13 Contact Manufacturer 2 Obsolete 4

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Yes 4

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240 2 260 6 NOT SPECIFIED 2

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Polarity/Channel Type (1)

NPN 9

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150 mW 4

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Surface Mount (1)

YES 8

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Transition Frequency-Nom (fT) (1)

250 MHz 5

19 hits Apply