Filter Your Search
1 - 10 of 34 results
Select Parts | Part Number |
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UM2102DR
Microsemi Corporation
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UM2102SME3
Microsemi Corporation
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UM2102E
Microchip Technology Inc
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UM2102CRE3
Microsemi Corporation
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UM2102A
Microchip Technology Inc
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UM2102SME3
Microchip Technology Inc
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UM2102C
Microchip Technology Inc
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UM2102SM
Microchip Technology Inc
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UM2102
Microchip Technology Inc
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UM2102
Microsemi Corporation
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Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Surface Mount
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Technology |
Additional Feature
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JESD-30 Code
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Qualification Status
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JESD-609 Code
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Time@Peak Reflow Temperature-Max (s)
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Number of Terminals
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Package Body Material
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Package Shape
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Package Style
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Terminal Finish
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Terminal Form
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Terminal Position
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Ihs Manufacturer
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Reach Compliance Code
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ECCN Code
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HTS Code
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Application
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Breakdown Voltage-Min
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Configuration |
Diode Capacitance-Max
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Diode Capacitance-Nom
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Diode Element Material
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Diode Forward Resistance-Max
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Diode Res Test Current
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Diode Res Test Frequency
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Diode Type | Frequency Band |
Minority Carrier Lifetime-Nom
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Number of Elements |
Power Dissipation-Max
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Reverse Test Voltage
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Case Connection
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Samacsys Manufacturer
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No | No | Transferred | NO | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XRPM-F2 | Not Qualified | e0 | 175 °C | 2 | UNSPECIFIED | ROUND | POST/STUD MOUNT | TIN LEAD | FLAT | RADIAL | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | 1.9 pF | SILICON | 2 Ω | 100 mA | 2 MHz | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 18.75 W | 100 V | ||||||
Transferred | YES | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XELF-R2 | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.80 | ATTENUATOR; SWITCHING | SINGLE | 2.5 pF | SILICON | 2 Ω | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 15 W | ISOLATED | ||||||||||||||||
No | Active | YES | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XAMW-F2 | Not Qualified | e0 | 175 °C | -65 °C | 2 | UNSPECIFIED | ROUND | MICROWAVE | TIN LEAD | FLAT | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.60 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | 2.5 pF | SILICON | 2 Ω | 100 mA | 2 MHz | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 2.5 W | 100 V | ||||||
Transferred | NO | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XUPM-N1 | 1 | UNSPECIFIED | ROUND | POST/STUD MOUNT | NO LEAD | UPPER | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.80 | ATTENUATOR; SWITCHING | SINGLE | 2.5 pF | SILICON | 2 Ω | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 25 W | ANODE | ||||||||||||||||
No | Active | YES | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XEMW-N2 | Not Qualified | e0 | 175 °C | -65 °C | 2 | UNSPECIFIED | ROUND | MICROWAVE | TIN LEAD | NO LEAD | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.80 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | 2.5 pF | SILICON | 2 Ω | 100 mA | 2 MHz | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 25 W | 100 V | Microchip | |||||
Active | YES | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XELF-R2 | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.80 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | SILICON | 2 Ω | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 15 W | ISOLATED | |||||||||||||||
No | Active | NO | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XUPM-N1 | Not Qualified | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | 1 | UNSPECIFIED | ROUND | POST/STUD MOUNT | NO LEAD | UPPER | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.60 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | 2.5 pF | SILICON | 2 Ω | 100 mA | 2 MHz | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 25 W | 100 V | CATHODE | |||||
No | Active | YES | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XELF-R2 | Not Qualified | e0 | 175 °C | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.60 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | 1.9 pF | SILICON | 2 Ω | 100 mA | 2 MHz | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 15 W | 100 V | ISOLATED | ||||||
No | Active | POSITIVE-INTRINSIC-NEGATIVE | Not Qualified | e0 | TIN LEAD | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 200 V | 2.5 pF | SILICON | 2 Ω | PIN DIODE | 60 µs | 25 W | ||||||||||||||||||||||||||
No | No | Transferred | POSITIVE-INTRINSIC-NEGATIVE | Not Qualified | e0 | TIN LEAD | MICROSEMI CORP | compliant | EAR99 | 200 V | 2.5 pF | SILICON | 2 Ω | PIN DIODE | 60 µs | 25 W |
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UM2102DR
Microsemi Corporation
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Check for Price | No | No | Transferred | NO | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XRPM-F2 | Not Qualified | e0 | 175 °C | 2 | UNSPECIFIED | ROUND | POST/STUD MOUNT | TIN LEAD | FLAT | RADIAL | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | 1.9 pF | SILICON | 2 Ω | 100 mA | 2 MHz | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 18.75 W | 100 V | |||||||
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UM2102SME3
Microsemi Corporation
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Check for Price | Transferred | YES | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XELF-R2 | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.80 | ATTENUATOR; SWITCHING | SINGLE | 2.5 pF | SILICON | 2 Ω | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 15 W | ISOLATED | |||||||||||||||||
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UM2102E
Microchip Technology Inc
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Check for Price | No | Active | YES | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XAMW-F2 | Not Qualified | e0 | 175 °C | -65 °C | 2 | UNSPECIFIED | ROUND | MICROWAVE | TIN LEAD | FLAT | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.60 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | 2.5 pF | SILICON | 2 Ω | 100 mA | 2 MHz | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 2.5 W | 100 V | |||||||
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UM2102CRE3
Microsemi Corporation
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Check for Price | Transferred | NO | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XUPM-N1 | 1 | UNSPECIFIED | ROUND | POST/STUD MOUNT | NO LEAD | UPPER | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.80 | ATTENUATOR; SWITCHING | SINGLE | 2.5 pF | SILICON | 2 Ω | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 25 W | ANODE | |||||||||||||||||
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UM2102A
Microchip Technology Inc
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Check for Price | No | Active | YES | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XEMW-N2 | Not Qualified | e0 | 175 °C | -65 °C | 2 | UNSPECIFIED | ROUND | MICROWAVE | TIN LEAD | NO LEAD | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.80 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | 2.5 pF | SILICON | 2 Ω | 100 mA | 2 MHz | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 25 W | 100 V | Microchip | ||||||
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UM2102SME3
Microchip Technology Inc
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Check for Price | Active | YES | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XELF-R2 | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.80 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | SILICON | 2 Ω | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 15 W | ISOLATED | ||||||||||||||||
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UM2102C
Microchip Technology Inc
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Check for Price | No | Active | NO | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XUPM-N1 | Not Qualified | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | 1 | UNSPECIFIED | ROUND | POST/STUD MOUNT | NO LEAD | UPPER | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.60 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | 2.5 pF | SILICON | 2 Ω | 100 mA | 2 MHz | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 25 W | 100 V | CATHODE | ||||||
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UM2102SM
Microchip Technology Inc
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Check for Price | No | Active | YES | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | O-XELF-R2 | Not Qualified | e0 | 175 °C | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.60 | ATTENUATOR; SWITCHING | 200 V | SINGLE | 2.5 pF | 1.9 pF | SILICON | 2 Ω | 100 mA | 2 MHz | PIN DIODE | MEDIUM FREQUENCY TO HIGH FREQUENCY | 25 µs | 1 | 15 W | 100 V | ISOLATED | |||||||
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UM2102
Microchip Technology Inc
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Check for Price | No | Active | POSITIVE-INTRINSIC-NEGATIVE | Not Qualified | e0 | TIN LEAD | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 200 V | 2.5 pF | SILICON | 2 Ω | PIN DIODE | 60 µs | 25 W | |||||||||||||||||||||||||||
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UM2102
Microsemi Corporation
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Check for Price | No | No | Transferred | POSITIVE-INTRINSIC-NEGATIVE | Not Qualified | e0 | TIN LEAD | MICROSEMI CORP | compliant | EAR99 | 200 V | 2.5 pF | SILICON | 2 Ω | PIN DIODE | 60 µs | 25 W |