Parametric results for: UF840G-TQ2-R under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

AVALANCHE RATED 1

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510.0 mJ 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

500 V 1

1 hit Apply

Drain Current-Max (ID) (1)

8 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

850 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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TO-263AB 1

1 hit Apply

R-PSSO-G2 1

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Manufacturer (1)

Unisonic Technologies Co Ltd 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

2 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply