Parametric results for: UF8010 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

310.0 mJ 6

16 hits Apply

ISOLATED 2

16 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

16 hits Apply

DS Breakdown Voltage-Min (1)

100 V 6

16 hits Apply

Drain Current-Max (ID) (1)

80 A 6

16 hits Apply

Drain-source On Resistance-Max (1)

15 mΩ 6

16 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

16 hits Apply

TO-220AB 4 TO-263AB 2

16 hits Apply

R-PSFM-T3 4 R-PSSO-G2 2

16 hits Apply

Manufacturer (1)

Unisonic Technologies Co Ltd 16

16 hits Apply

Number of Elements (1)

1 6

16 hits Apply

Number of Terminals (2)

2 2 3 4

16 hits Apply

ENHANCEMENT MODE 6

16 hits Apply

PLASTIC/EPOXY 6

16 hits Apply

RECTANGULAR 6

16 hits Apply

FLANGE MOUNT 4 SMALL OUTLINE 2

16 hits Apply

Active 16

16 hits Apply

NOT SPECIFIED 6

16 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

16 hits Apply

Surface Mount (2)

NO 4 YES 2

16 hits Apply